Breaking the speed limits of phase-change memory

Science

Volumn 336, Issue 6088, 2012, Pages 1566-1569

  Loke, D ^a,b,c   Lee, T H ^b   Wang, W J ^a   Shi, L P ^a   Zhao, R ^a   Yeo, Y C ^d   Chong, T C ^e   Elliott, S R ^b  

^a DATA STORAGE INSTITUTE   (Singapore)

^b UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^e SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MEDIUM; CRYSTALLIZATION; MEMORY; REACTION KINETICS;

AB INITIO CALCULATION; ARTICLE; CRYSTALLIZATION; DATA STORAGE DEVICE; ENERGY; MODEL; PHASE CHANGE RANDOM ACCESS MEMORY; PRIORITY JOURNAL; VELOCITY;

EID: 84862594877     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1221561     Document Type: Article

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