Minimal phase-change marks produced in amorphous Ge2Sb 2Te5 films

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 43, Issue 6 B, 2004, Pages

  Gotoh, Tamihiro ^a   Sugawara, Kentaro ^a   Tanaka, Keiji ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

AFM; Ge Sb Te; Joule heat; Nanosoale crystallization; Phase change

Indexed keywords

ATOMIC FORCE MICROSCOPY; CANTILEVER BEAMS; CRYSTALLINE MATERIALS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; IMAGING TECHNIQUES; LIGHT REFLECTION; MICROSCOPES; SEMICONDUCTING GERMANIUM COMPOUNDS; THERMODYNAMIC STABILITY;

ATOMIC FORCE MICROSCOPE (AFM); JOULE HEAT; NANOSCALE CRYSTALLIZATION; PHASE CHANGES;

AMORPHOUS FILMS;

EID: 4243056046     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.43.l818     Document Type: Article

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