Phase change materials and their application to random access memory technology

Microelectronic Engineering

Volumn 85, Issue 12, 2008, Pages 2330-2333

  Raoux, Simone ^a   Shelby, Robert M ^b   Jordan Sweet, Jean ^b   Munoz, Becky ^c   Salinga, Martin ^d   Chen, Yi Chou ^e   Shih, Yen Hao ^e   Lai, Erh Kun ^e   Lee, Ming Hsiu ^e  

^a IBM ALMADEN RESEARCH CENTER   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c Boise State University   (United States)

^d RWTH AACHEN UNIVERSITY   (Germany)

^e MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

Non volatile memory; Phase change materials; Phase change random access memory

Indexed keywords

AMORPHOUS MATERIALS; BUOYANCY; CRYSTALLINE MATERIALS; DATA STORAGE EQUIPMENT; ELECTRIC RESISTANCE; MATERIALS PROPERTIES; QUENCHING; RANDOM ACCESS STORAGE; SOLID STATE DEVICES;

CRYSTALLIZATION TEMPERATURES; ELECTRICAL RESISTIVITIES; MEMORY TECHNOLOGIES; NON-VOLATILE MEMORY; OPTICAL-; PHASE CHANGE RANDOM ACCESS MEMORY; RANDOM ACCESSES; STORAGE MEDIAS;

PHASE CHANGE MEMORY;

EID: 56949107067     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.08.004     Document Type: Article

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