Low-bias electron transport properties of germanium telluride ultrathin films

Journal of Applied Physics

Volumn 113, Issue 6, 2013, Pages

  Liu, Jie ^a   Anantram, M P ^a  

^a University of Washington   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO MOLECULAR DYNAMICS; AMORPHOUS PHASE; ATOMIC LAYER; ELECTRICAL CONDUCTANCE; ELECTRON TRANSPORT; ELECTRONIC TRANSPORT PROPERTIES; GERMANIUM TELLURIDE; METAL-INDUCED GAP STATE; NANO-METER-SCALE; PHASE-CHANGE MEMORY TECHNOLOGIES; READ OPERATION; SCALING LIMITS; SHARP INCREASE; SIZE DEPENDENT; TIN ELECTRODES;

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRODES; ELECTRON TRANSPORT PROPERTIES; ENERGY GAP; GERMANIUM; MOLECULAR DYNAMICS; PHASE CHANGE MATERIALS; TITANIUM NITRIDE; TRANSPORT PROPERTIES;

ULTRATHIN FILMS;

EID: 84874336949     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4790801     Document Type: Article

References (35)

1. R. E. Simpson, M. Krbal, P. Fons, A. V. Kolobov, J. Tominaga, T. Uruga, and H. Tanida, Nano Lett. 10, 414 (2010). 10.1021/nl902777z
2. M. A. Caldwell, S. Raoux, R. Y. Wang, H. P. Wong, and D. J. Milliron, J. Mater. Chem. 20, 1285 (2010). 10.1039/b917024c
3. S. Raoux, J. L. Jordan-Sweet, and A. J. Kellock, J. Appl. Phys. 103, 114310 (2008). 10.1063/1.2938076
4. S. Raoux, C. T. Rettner, J. L. Jordan-Sweet, V. R. Deline, J. B. Philipp, and H. L. Lung, in Proceedings of European Phase Change and Ovonics Symposium (2006), p. 127.
5. H. P. Wong, S. Kim, B. Lee, M. A. Caldwell, J. L. Liang, Y. Wu, R. G. D. Jeyasingh, and S. M. Yu, in 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, 2010.
6. H. P. Wong, S. Raoux, S. Kim, J. L. Liang, J. P. Reifenberg, B. Rajendran, M. Asheghi, and K.E. Goodson, Proc. IEEE 98, 2201-2227 (2010). 10.1109/JPROC.2010.2070050
7. G. W. Burr, M. J. Breitwisch, M. Franceschini, D. Garetto, K. Gopalakrishnan, B. Jackson, B. Kurdi, C. Lam, L. A. Lastras, A. Padilla, B. Rajendran, S. Raoux, and R. S. Shenoy, J. Vac. Sci. Technol. B 28, 223 (2010). 10.1116/1.3301579
8. S. Raoux, G. W. Burr, M. J. Breitwisch, C. T. Rettner, Y. C. Chen, R. M. Shelby, M. Salinga, D. Krebs, S. H. Chen, H. L. Lung, and C. H. Lam, IBM J. Res. Dev. 52, 465-479 (2008). 10.1147/rd.524.0465
9. Phase Change Materials Science and Applications, edited by, S. Raoux, and, M. Wuttig, (Springer, New York, 2009).
10. J. Akola, J. Larrucea, and R. O. Jones, Phys. Rev. B 83, 094113 (2011). 10.1103/PhysRevB.83.094113
11. J. Akola, R. O. Jones, S. Kohara, S. Kimura, K. Kobayashi, M. Takata, T. Matsunaga, R. Kojima, and N. Yamada, Phys. Rev. B 80, 020201 (2009). 10.1103/PhysRevB.80.020201
12. J. Akola and R. O. Jones, Phys. Rev. B 79, 134118 (2009). 10.1103/PhysRevB.79.134118
13. J. Akola and R. O. Jones, Phys. Rev. B 76, 235201 (2007). 10.1103/PhysRevB.76.235201
14. T. H. Lee and S. R. Elliott, Phys. Rev. B 84, 094124 (2011). 10.1103/PhysRevB.84.094124
15. T. H. Lee and S. R. Elliott, Phys. Rev. Lett. 107, 145702 (2011). 10.1103/PhysRevLett.107.145702
16. W. J. Wang, D. Loke, L. P. Shi, R. Zhao, H. X. Yang, L. T. Law, L. T. Ng, K. G. Lim, Y. C. Yeo, T. C. Chong, and A. L. Lacaita, Sci. Rep. 2 (2011). 10.1038/srep00360
17. F. Xiong, A. Liao, D. Estrada, and E. Pop, Science 332, 568 (2011). 10.1126/science.1201938
18. S. W. Nam, H. S. Chung, Y. C. Lo, L. Qi, J. Li, Y. Lu, A. T. C. Johnson, Y. Jung, P. Nukala, and R. Agarwal, Science 336, 1561 (2012). 10.1126/science.1220119
19. D. Loke, T. H. Lee, W. J. Wang, L. P. Shi, R. Zhao, Y. C. Yeo, T. C. Chong, and S. R. Elliott, Science 336, 1566 (2012). 10.1126/science.1221561
20. S. B. Kim, B. J. Bae, Y. Zhang, R. G. D. Jeyasingh, Y. Kim, I. G. Baek, S. Park, S. W. Nam, and H. P. Wong, IEEE Trans. Electron Devices 58, 1483 (2011). 10.1109/TED.2011.2121911
21. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, and R. Bez, Tech. Dig. -Int. Electron Devices Meet. 2003, 29.6.1. 10.1109/IEDM.2003.1269376
22. S. Kim and H. P. Wong, IEEE Electron Device Lett. 28, 697 (2007). 10.1109/LED.2007.901347
23. J. Liu, B. Yu, and M. P. Anantram, IEEE Electron Device Lett. 32, 1340 (2011). 10.1109/LED.2011.2162390
24. D. Yu, S. Brittman, J. S. Lee, A. L. Falk, and H. Park, Nano Lett. 8, 3429 (2008). 10.1021/nl802261s
25. D. Krebs, S. Raoux, C. T. Rettner, G. W. Burr, M. Salinga, and M. Wuttig, Appl. Phys. Lett. 95, 082101 (2009). 10.1063/1.3210792
26. T. Chattopadhyay, J. X. Boucherle, and H. G. Schnering, J. Phys. C 20, 1431 (1987). 10.1088/0022-3719/20/10/012
27. T. Nonaka,; G. Ohbayashi, Y. Toriumi, Y. Mori, and H. Hashimoto, Thin Solid Films 370, 258 (2000). 10.1016/S0040-6090(99)01090-1
28. G. E. Ghezzi, Appl. Phys. Lett. 99, 151906 (2011). 10.1063/1.3651321
29. D. B. Dove, M. B. Heritage, K. L. Chopra, and S. K. Bahl, Appl. Phys. Lett. 16, 138 (1970). 10.1063/1.1653128
30. L. L. Chang, P. J. Stiles, and L. Esaki, IBM J. Res. Dev. 10, 484 (1966). 10.1147/rd.106.0484
31. J. M. Soler, E. Artacho, J. D. Gale, A. Garca, J. Junquera, P. Ordejon, and D. Sanchez-Portal, J. Phys.: Condens. Matter 14, 2745 (2002). 10.1088/0953-8984/14/11/302
32. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
33. R. Lake, G. Klimeck, R. C. Bowen, and D. Jovanovic, J. Appl. Phys. 81, 7845 (1997). 10.1063/1.365394
34. M. P. L. Sancho, J. M. L. Sancho, and J. Rubio, J. Phys. F: Met. Phys. 15, 851 (1985). 10.1088/0305-4608/15/4/009
35. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188