Deposition of transparent and conductive ZnO films by an atmospheric pressure plasma-jet-assisted process

Thin Solid Films

Volumn 570, Issue PB, 2014, Pages 423-428

  Hsu, C M ^a   Lien, S T ^b   Yang, Y J ^a   Chen, J Z ^b   Cheng, I C ^a   Hsu, C C ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

APPJ; Atmospheric pressure plasmas; TCO; Transparent and conductive coatings; ZnO

Indexed keywords

ANNEALING; ATMOSPHERIC PRESSURE; DEPOSITION; II-VI SEMICONDUCTORS; METALLIC FILMS; OXIDE MINERALS; PLASMA JETS; PLASMA SOURCES; SEMICONDUCTOR DOPING; SURFACE ROUGHNESS; THIN FILMS; ZINC CHLORIDE; ZINC OXIDE;

APPJ; ATMOSPHERIC PRESSURE PLASMA JETS; ATMOSPHERIC PRESSURE PLASMAS; CONDUCTIVE COATINGS; OPTIMAL CONDITIONS; PULSED POWER SOURCES; ROOT MEAN SQUARE; SHEET-LIKE STRUCTURE;

CHLORINE COMPOUNDS;

EID: 84912032391     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.02.102     Document Type: Article

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