Microstructural and optical properties of Ga-doped ZnO semiconductor thin films prepared by sol-gel process

Thin Solid Films

Volumn 519, Issue 5, 2010, Pages 1516-1520

  Tsay, Chien Yie ^a   Wu, Chun Wei ^a   Lei, Chien Ming ^b   Chen, Fan Shiong ^c   Lin, Chung Kwei ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b CHINESE CULTURE UNIVERSITY   (Taiwan)

^c TATUNG UNIVERSITY   (Taiwan)

Author keywords

Ga doped ZnO; Photoluminescence; Sol gel process; Transparent oxide semiconductor

Indexed keywords

CRYSTALLINITIES; ELECTRICAL RESISTIVITY; GA DOPANTS; GA DOPING; GA-DOPED ZNO; GLASS SUBSTRATES; MICRO-STRUCTURAL; PHOTOLUMINESCENCE SPECTRUM; PREFERRED ORIENTATIONS; RMS ROUGHNESS; ROOM TEMPERATURE; SEMICONDUCTOR THIN FILMS; SPIN-COATED FILMS; TRANSPARENT OXIDE SEMICONDUCTOR; TRANSPARENT THIN FILM; TRANSPARENT THIN FILM TRANSISTOR; VISIBLE RANGE; XRD; ZNO THIN FILM;

DOPING (ADDITIVES); ELECTRIC PROPERTIES; GALLIUM ALLOYS; GELS; METALLIC FILMS; MICROSTRUCTURE; NANOSTRUCTURED MATERIALS; OPTICAL FILMS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SOL-GELS; SOLS; SUBSTRATES; SURFACE ROUGHNESS; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

SOL-GEL PROCESS;

EID: 78649737504     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.08.170     Document Type: Conference Paper

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