Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet

Thin Solid Films

Volumn 519, Issue 15, 2011, Pages 5114-5117

  Chang, Kow Ming ^a,b   Huang, Sung Hung ^a   Wu, Chin Jyi ^c   Lin, Wei Li ^a   Chen, Wei Chiang ^a   Chi, Chia Wei ^a   Lin, Je Wei ^c   Chang, Chia Chiang ^c  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b I SHOU UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Atmospheric pressure plasma; Indium nitrate; Indium doped zinc oxide; Transparent conductive oxide; Zinc nitrate

Indexed keywords

ATMOSPHERIC PRESSURE PLASMAS; INDIUM NITRATE; INDIUM-DOPED ZINC OXIDE; TRANSPARENT CONDUCTIVE OXIDE; ZINC NITRATE;

ATMOSPHERIC PRESSURE; CONDUCTIVE FILMS; ELECTRIC PROPERTIES; INDIUM; INDUSTRIAL APPLICATIONS; NITRATES; OPTICAL PROPERTIES; PLASMA ACCELERATORS; PLASMA JETS; PLASMAS; SEMICONDUCTOR DOPING; X RAY DIFFRACTION; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 79957638115     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.01.156     Document Type: Conference Paper

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