Highly luminescent columnar ZnO films grown directly on n-Si and p-Si substrates by low-temperature electrochemical deposition

Optical Materials

Volumn 33, Issue 6, 2011, Pages 914-919

  Lupan, Oleg ^a   Pauporté, Thierry ^a   Ursaki, V V ^b   Tiginyanu, I M ^b  

^a PSL RESEARCH UNIVERSITY   (France)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

Author keywords

Annealing; Electrodeposition; Photoluminescence; Thin films; ZnO

Indexed keywords

ANNEALING; CRYSTALLINE MATERIALS; ELECTROCHEMICAL DEPOSITION; ELECTRODEPOSITION; ELECTRODES; II-VI SEMICONDUCTORS; LOW TEMPERATURE PHENOMENA; METALLIC FILMS; OPTICAL FILMS; OPTOELECTRONIC DEVICES; OXIDE FILMS; PHOTOLUMINESCENCE; REDUCTION; SCANNING ELECTRON MICROSCOPY; TEMPERATURE; THIN FILM CIRCUITS; X RAY DIFFRACTION; ZINC OXIDE;

ANNEALING TEMPERATURES; CATHODIC POTENTIALS; DEVICE APPLICATION; ELECTROCHEMICAL SYNTHESIS; LOW TEMPERATURE PHOTOLUMINESCENCE; LOW TEMPERATURE TECHNIQUES; LUMINESCENCE INTENSITY; ZINC OXIDE THIN FILMS;

THIN FILMS;

EID: 79952532411     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2011.01.024     Document Type: Article

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