Electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures

Journal of Physics D: Applied Physics

Volumn 44, Issue 45, 2011, Pages

  Chin, H A ^a   Cheng, I C ^a   Li, C K ^a   Wu, Y R ^a   Chen, J Z ^b   Lu, W S ^c   Lee, W L ^c  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^c INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER LAYERS; ELECTRICAL CONDUCTIVITY; HALL MEASUREMENTS; IMPURITY SCATTERING; LOW TEMPERATURES; MG CONTENT; MODULATION DOPING; MODULATION-DOPED; POLARIZATION EFFECT; POLYCRYSTALLINE; ROUGHNESS SCATTERING;

CARRIER CONCENTRATION; CRYSTALS; ELECTRIC CONDUCTIVITY; ELECTRON ABSORPTION; HETEROJUNCTIONS; TWO DIMENSIONAL ELECTRON GAS;

MODULATION;

EID: 80055075606     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/44/45/455101     Document Type: Article

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