Sol-gel preparation of transparent and conductive aluminum-doped zinc oxide films with highly preferential crystal orientation

Journal of the American Ceramic Society

Volumn 81, Issue 6, 1998, Pages 1622-1632

  Ohyama, Masashi ^a   Kozuka, Hiromitsu ^b,c   Yoko, Toshinobu ^b,c  

^a IDEMITSU KOSAN CO LTD   (Japan)

^b KYOTO UNIVERSITY   (Japan)

^c AMERICAN CERAMIC SOCIETY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; ANNEALING; COMPOSITION EFFECTS; CONDUCTIVE FILMS; CRYSTAL ORIENTATION; DEPOSITION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; GLASS; SILICA; SOL-GELS; X RAY CRYSTALLOGRAPHY;

DIP COATING;

ZINC OXIDE;

EID: 0032099920     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.1998.tb02524.x     Document Type: Article

References (15)

1. D. Cossement and J.-M. Streydio, "Fabrication of ZnO Polycrystalline Layers by Chemical Spray," J. Cryst. Growth, 72, 57-60 (1985).
2. M. N. Islam, B. K. Samantaray, K. L. Chopra, and H. N. Acharya, "Microstructural Characterization of Transparent Conducting Aluminum Doped Zinc Oxide Films Prepared by Spray Pyrolysis," Sol. Energy Mater. Sol Cells, 29, 27-35 (1993).
3. M. F. Ogawa, Y. Natsume, T. Hirayama, and H. Sakata, "Preparation and Electrical Properties of Undoped Zinc Oxide Films by CVD," J. Mater. Sci. Lett., 9, 1351-53 (1990).
4. J. Nishino, S. Ohshio, and K. Kamata, "Preparation of Aluminum-Doped Zinc Oxide Films by a Normal-Pressure CVD Method," J. Am. Ceram, Soc., 75, 3469-72 (1992).
5. Y. Igasaki and H. Saito, "Substrate Temperature Dependence of Electrical Properties of ZnO:Al Epitaxial Films on Sapphire (1210)," J. Appl. Phys., 69, 2190-95 (1991).
6. Y. Igasaki, "Epitaxial Growth of Aluminum-Doped Zinc Oxide Films on (1120) Oriented Sapphire Substrates," J. Cryst. Growth, 116, 357-63 (1992).
7. T. Minami, H. Sato, S. Takata, N. Ogawa, and T. Mouri, "Large-Area Milky Transparent Conducting Al-Doped ZnO Films Prepared by Magnetron Sputtering," Jpn. J. Appl. Phys., Part 2, 31, L1106-L1109 (1992).
8. T. Tsuchiya, T. Enomoto, and T. Sci, "Preparation and Properties of Transparent Conductive Thin Films by the Sol-Gel Process," J. Non-Cryst. Solids, 178, 327-32 (1994).
9. Y. Ohya, H. Saiki, and Y. Takahashi, "Preparation of Transparent, Electrically Conducting ZnO Film from Zinc Acetate and Alkoxide," J. Mater. Sci., 29, 4099-103 (1994).
10. W. Tang and D. C. Cameron, "Aluminum-Doped Zinc Oxide Transparent Conductors Deposited by the Sol-Gel Process," Thin Solid Films, 238, 83-87 (1994).
11. 2 and ZnO Films Fabricated by the Sol-Gel Method," J. Am. Ceram. Soc., 79, 825-30 (1996).
12. K. Nishio, S. Miyake, T. Sei, Y. Watanabe, and T. Tsuchiya, "Preparation of Highly Oriented Thin Film Exhibiting Transparent Conduction by the SolGel Process," J. Mater. Sci., 31, 3651-56 (1996).
13. T. Isago, S. Sonobe, T. Ohkawa, and H. Sunayama, "Preparation of Transparent and Conductive ZnO Thin Films by Applying a Solution of Zinc Alkoxide" (in Jpn.), J. Ceram. Soc. Jpn., 104, 1052-55 (1996).
14. M. Ohyama, H. Kozuka, and T. Yoko, "Preparation of ZnO Films with Preferential Orientation by Sol-Gel Method," J. Ceram. Soc. Jpn., 104, 164-68 (1996).
15. M. Ohyama, H. Kozuka, and T. Yoko, "Sol-Gel Preparation of ZnO Film with Extremely Preferred Orientation along (002) Plane from Zinc Acetate Solution," Thin Solid Films, 306, 78-85 (1997).