Chemical beam deposition of high-k gate dielectrics on III-V semiconductors: TiO2 on In0.53Ga0.47As

Materials Research Society Symposium Proceedings

Volumn 1155, Issue , 2009, Pages 111-117

  Engel Herbert, Roman ^a   Hwang, Yoontae ^a   LeBeau, James M ^a   Zheng, Yan ^a   Stemmer, Susanne ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC CHARACTERISTIC; BAND ALIGNMENTS; BAND OFFSETS; BEAM DEPOSITION; BIAS POLARITY; HIGH-K GATE DIELECTRICS; II-IV SEMICONDUCTORS; METAL-OXIDE-SEMICONDUCTOR CAPACITORS; SMOOTH SURFACE; THERMALLY STABLE; TIO; TITANIUM ISOPROPOXIDE; VALENCE BAND OFFSETS;

CHEMICAL MODIFICATION; CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; ELECTROLYTIC CAPACITORS; GATE DIELECTRICS; GATES (TRANSISTOR); LEAKAGE CURRENTS; PLATINUM; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; TITANIUM; X RAY PHOTOELECTRON SPECTROSCOPY;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77950977458     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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