Optical and electrical characterization of the electron beam gun evaporated TiO2 film

Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 1057-1061

  Mikhelashvili, V ^a   Eisenstein, G ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC SPACE CHARGE; ELECTRON GUNS; EVAPORATION; LEAKAGE CURRENTS; PERMITTIVITY; REDUCTION; REFRACTIVE INDEX; SEMICONDUCTING FILMS; TITANIUM DIOXIDE;

ELECTRON BEAM GUN EVAPORATION; FOWLER-NORDHEIM THEORY;

MIS DEVICES;

EID: 0035393565     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00075-0     Document Type: Article

References (11)

1. Insulating properties of tantalum pentoxide capacitor film obtained by annealing in dry ozone
2. 5 thin films deposited by electron beam gun evaporation
3. Structural and electrical characteristics of metal-insulator-semiconductor diodes based on dielectric thin films on silicon
4. 2 anatase thin films
5. 2O ambients
6. 2
7. 2 anatase single crystals
8. Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon
9. 3 films