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Volumn 109, Issue 2, 2011, Pages

The effect of interface processing on the distribution of interfacial defect states and the C-V characteristics of III-V metal-oxide-semiconductor field effect transistors

(3) Cheng, Cheng Wei a,b Apostolopoulos, George c Fitzgerald, Eugene A a

a Massachusetts Institute of Technology Cambridge (United States)

b IBM T J WATSON RESEARCH CENTER (United States)

c INSTITUTE OF NUCLEAR TECHNOLOGY AND RADIATION PROTECTION (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; BAND GAPS; C-V CHARACTERISTIC; C-V CURVE; CAPACITANCE VOLTAGE MEASUREMENTS; CONDUCTANCE-FREQUENCY; DEFECT STATE; DIFFERENT PROCESS; EX SITU; GAAS; GALLIUM OXIDES; HIGH FREQUENCY; IN-SITU; INSULATOR-SEMICONDUCTOR INTERFACE; INTERFACE FORMATION; INTERFACE STATE CHARGE; INTERFACIAL DEFECT; ISOPROPANOL; METAL OXIDE SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; METAL-ORGANIC; OXYGEN SOURCES; PROCESSING CONDITION;

ALUMINUM; ARSENIC; ATOMIC LAYER DEPOSITION; DEFECT DENSITY; DEFECTS; DIELECTRIC DEVICES; ELECTRIC BREAKDOWN; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM ARSENIDE; OXYGEN; SEMICONDUCTING GALLIUM;

CHEMICAL VAPOR DEPOSITION;

EID: 79551679906 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3537915 Document Type: Article

Times cited : (54)

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