Experimental evidence for the correlation between the weak inversion hump and near midgap states in dielectric/InGaAs interfaces

Applied Physics Letters

Volumn 100, Issue 17, 2012, Pages

  Krylov, Igor ^a   Kornblum, Lior ^a   Gavrilov, Arkady ^a   Ritter, Dan ^a   Eizenberg, Moshe ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VOLTAGE; EXPERIMENTAL EVIDENCE; GATE STACKS; INTERFACE STATES DENSITY; MINORITY CARRIER; PARALLEL CONDUCTANCE; TEMPERATURE DEPENDENT; WEAK INVERSIONS;

ACTIVATION ENERGY; GATE DIELECTRICS; SEMICONDUCTING INDIUM; SOLID STATE PHYSICS;

INTERFACE STATES;

EID: 84860348381     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4704925     Document Type: Article

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