Al2O3 growth on (100) In0.53Ga 0.47as initiated by cyclic trimethylaluminum and hydrogen plasma exposures

Applied Physics Express

Volumn 4, Issue 9, 2011, Pages

  Carter, Andrew D ^a   Mitchell, William J ^a   Thibeault, Brian J ^a   Law, Jeremy J M ^a   Rodwell, Mark J W ^a  

^a University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; CONDUCTANCE METHOD; CONDUCTION BAND EDGE; HYDROGEN PLASMA EXPOSURES; HYDROGEN PLASMA TREATMENTS; HYDROGEN PLASMAS; INTERFACE TRAP DENSITY; TRIMETHYLALUMINUM;

ALUMINUM COATINGS; ATOMIC LAYER DEPOSITION; ELECTRIC CONDUCTIVITY; ELECTRON MOBILITY; GALLIUM; PLASMA APPLICATIONS; PLASMAS; VOLTAGE DIVIDERS;

HYDROGEN;

EID: 80052554626     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.4.091102     Document Type: Article

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