Re-examination of the extraction of MOS interface-state density by C-V stretchout and conductance methods

Semiconductor Science and Technology

Volumn 28, Issue 8, 2013, Pages

  Chen, Han Ping ^a   Yuan, Yu ^a,b   Yu, Bo ^a,b   Chang, Chih Sheng ^c   Wann, Clement ^c   Taur, Yuan ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b QUALCOMM INC   (United States)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTANCE METHOD; FREQUENCY RANGES; INTERFACE STATE DENSITY; OXIDE CAPACITANCE; STRONG INVERSION; TERMAN METHODS; THIN OXIDES; TUNNELING LEAKAGE;

CAPACITANCE; EXTRACTION;

INTERFACE STATES;

EID: 84880320223     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/28/8/085008     Document Type: Article

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