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Applied Physics Letters

Volumn 97, Issue 6, 2010, Pages

Quantification of trap densities at dielectric/III-V semiconductor interfaces

(3) Engel Herbert, Roman a Hwang, Yoontae a Stemmer, Susanne a

a University of California (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDBENDING; CAPACITANCE-VOLTAGE CURVE; CONDUCTION BAND DENSITY OF STATE; HIGH FREQUENCY HF; HIGH-K GATE DIELECTRICS; II-IV SEMICONDUCTORS; IN0.53GA0.47AS; INTERFACE TRAP DENSITY; NON PARABOLICITY; POTENTIAL SOURCES; SEMICONDUCTOR INTERFACES; TRAP DENSITY;

CONDUCTION BANDS; ELECTRON MOBILITY; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LANDFORMS;

GATE DIELECTRICS;

EID: 77955738493 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3479047 Document Type: Article

Times cited : (49)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.