Interface dipole engineering in metal gate/high-k stacks

Chinese Science Bulletin

Volumn 57, Issue 22, 2012, Pages 2872-2878

  Huang, AnPing ^a   Zheng, XiaoHu ^a   Xiao, ZhiSong ^a   Wang, Mei ^a   Di, ZengFeng ^b   Chu, Paul K ^c  

^a BEIHANG UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

effective work function; high k dielectrics; interface dipole; metal gate; MOS stack

Indexed keywords

EID: 84865527502     PISSN: 10016538     EISSN: 18619541     Source Type: Journal    
DOI: 10.1007/s11434-012-5289-6     Document Type: Review

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