Surface band bending and band alignment of plasma enhanced atomic layer deposited dielectrics on Ga- and N-face gallium nitride

Journal of Applied Physics

Volumn 116, Issue 12, 2014, Pages

  Yang, Jialing ^a   Eller, Brianna S ^a   Nemanich, Robert J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ALUMINUM OXIDE; AMMONIA; AMMONIUM HYDROXIDE; ATOMIC LAYER DEPOSITION; CARBON; CHEMICAL CLEANING; DIELECTRIC MATERIALS; ELECTRONIC STRUCTURE; ENERGY GAP; HAFNIUM OXIDES; III-V SEMICONDUCTORS; INTERFACE STATES; LOW-K DIELECTRIC; OXYGEN; PHOTOELECTRON SPECTROSCOPY; POLARIZATION; SILICA; SILICON;

ATOMIC LAYER DEPOSITED; CHARGE NEUTRALITY LEVEL; CONDUCTION BAND OFFSET; INTERFACE ELECTRONIC STRUCTURE; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; POST DEPOSITION ANNEALING; THEORETICAL CALCULATIONS; X RAY PHOTOEMISSION SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 84907611760     PISSN: 00218979     EISSN: 10897550     Source Type: Journal    
DOI: 10.1063/1.4895985     Document Type: Article

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