Band alignment of a HfO2-VO2-HfO2 confined well structure on silicon

Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics

Volumn 32, Issue 1, 2014, Pages

  Zhu, Chiyu ^a   Caudle, Sean L ^a   Yang, Jialing ^a   Smith, David J ^a   Nemanich, Robert J ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ELECTRONIC PROPERTIES; ENERGY GAP; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; SILICA; SILICON; SILICON OXIDES; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY; VALENCE BANDS; VANADIUM DIOXIDE;

BAND ALIGNMENTS; DIELECTRIC STRUCTURE; ELECTRIC FIELD-INDUCED TRANSITION; METAL-INSULATOR PHASE TRANSITION; N TYPE SILICON; NARROW BAND GAP; VALENCE BAND OFFSETS; WELL STRUCTURE;

HAFNIUM OXIDES;

EID: 84900611803     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4832341     Document Type: Article

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