Structural, optical, spectroscopic and electrical properties of Mo-doped ZnO thin films grown by radio frequency magnetron sputtering

Thin Solid Films

Volumn 566, Issue , 2014, Pages 61-69

  Soumahoro, I ^a,d   Colis, S ^a   Schmerber, G ^a   Leuvrey, C ^a   Barre, S ^a   Ulhaq Bouillet, C ^a   Muller, D ^a   Abd Lefdil, M ^b   Hassanain, N ^b   Petersen, J ^c   Berrada, A ^b   Slaoui, A ^a   Dinia, A ^a  

^a UNIVERSITÉ DE STRASBOURG   (France)

^b FACULTÉ DES SCIENCES   (Morocco)

^c LUXEMBOURG INSTITUTE OF SCIENCE AND TECHNOLOGY   (Luxembourg)

^d INSTITUT DES NANOSCIENCES DE PARIS   (France)

Author keywords

Hall effect; Molybdenum doped zinc oxide; Radio frequency sputtering; Thin films; X ray photoelectron spectroscopy

Indexed keywords

ATOMIC FORCE MICROSCOPY; HALL EFFECT; MAGNETRON SPUTTERING; METALLIC FILMS; OPTICAL DATA PROCESSING; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE; ZINC SULFIDE;

CROSS-SECTION TRANSMISSION ELECTRON MICROSCOPIES; FUNDAMENTAL ABSORPTION EDGE; HALL EFFECT MEASUREMENT; RADIO FREQUENCY SPUTTERING; RADIO-FREQUENCY-MAGNETRON SPUTTERING; RUTHERFORD BACK-SCATTERING SPECTROMETRY; THREE ORDERS OF MAGNITUDE; TRANSPARENT CONDUCTIVE OXIDES;

SEMICONDUCTOR DOPING;

EID: 84906093763     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2014.07.017     Document Type: Article

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