Improvement of electrical properties in ZnO thin films grown by radical source(RS)-MBE

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 287-292

  Iwata, K ^a   Fons, P ^a   Niki, S ^a   Yamada, A ^a   Matsubara, K ^a   Nakahara, K ^b   Takasu, H ^b  

^a ELECTROTECHNICAL LABORATORY   (Japan)

^b ROHM CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; CRYSTALS; ELECTRIC PROPERTIES; FILM GROWTH; MOLECULAR BEAM EPITAXY; OXYGEN; SAPPHIRE; SUBSTRATES; SURFACES; THERMAL EFFECTS; THIN FILMS;

LOW TEMPERATURE BUFFER LAYER; OXYGEN POLARITY; RADICAL SOURCE MOLECULAR BEAM EPITAXY;

ZINC OXIDE;

EID: 0034226094     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<287::AID-PSSA287>3.0.CO;2-7     Document Type: Article

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