Effects of substrate temperature on the properties of Ga-doped ZnO by pulsed laser deposition

Thin Solid Films

Volumn 513, Issue 1-2, 2006, Pages 90-94

  Park, Sang Moo ^a   Ikegami, Tomoaki ^a   Ebihara, Kenji ^a  

^a KUMAMOTO UNIVERSITY   (Japan)

Author keywords

Electrical properties and measurements; Ga doped ZnO (GZO); Optical properties; Pulse laser deposition (PLD); Structure properties; X ray photoelectron spectroscopy (XPS)

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DOPING (ADDITIVES); GALLIUM; PULSED LASER DEPOSITION; THIN FILMS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTRICAL PROPERTIES AND MEASUREMENTS; GA-DOPED ZNO (GZO); SUBSTRATE TEMPERATURE;

ZINC OXIDE;

EID: 33745268430     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.01.051     Document Type: Article

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