Ar pressure dependence of the properties of molybdenum-doped ZnO films grown by RF magnetron sputtering

Journal of Materials Science and Technology

Volumn 23, Issue 4, 2007, Pages 509-512

  Xiu, Xianwu ^a   Pang, Zhiyong ^a   Lv, Maoshui ^a   Dai, Ying ^a   Ye, Li'na ^a   Han, Shenghao ^a,b  

^a SHANDONG UNIVERSITY   (China)

^b SHANDONG UNIVERSITY   (China)

Author keywords

Ar pressure; Magnetron sputtering; Zinc oxide

Indexed keywords

ARGON; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; FILMS; MAGNETRON SPUTTERING; MOLYBDENUM; OPTICAL PROPERTIES; POLYCRYSTALLINE MATERIALS; PRESSURE; STRUCTURE (COMPOSITION);

ARGON PRESSURE; MOLYBDENUM DOPED ZINC OXIDE (MZO); RADIO FREQUENCY MAGNETRON SPUTTERING; RESISTIVITY;

ZINC OXIDE;

EID: 34547975441     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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