Influence of the deposition pressure on the properties of transparent and conductive ZnO:Ga thin-film produced by r.f. sputtering at room temperature

Thin Solid Films

Volumn 427, Issue 1-2, 2003, Pages 401-405

  Assuncao V ^a   Fortunato, E ^a   Marques, A ^a   Aguas H ^a   Ferreira, I ^a   Costa, M E V ^b   Martins, R ^a  

^a UNIVERSIDADE NOVA DE LISBOA   (Portugal)

^b UNIVERSITY OF AVEIRO   (Portugal)

Author keywords

Gallium; r.f. magnetron sputtering; Thin film; Transparent conductive oxide; Zinc oxide

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC CONDUCTIVITY OF SOLIDS; FILM GROWTH; MAGNETRON SPUTTERING; OPACITY; SPUTTER DEPOSITION; THIN FILMS;

TRANSPARENT CONDUCTIVE OXIDES (TCO);

ZINC OXIDE;

EID: 0037416605     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)01184-7     Document Type: Conference Paper

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