Effect of oxygen ambient on structural, optical and electrical properties of epitaxial Al-doped ZnO thin films on r-plane sapphire by pulsed laser deposition

Current Applied Physics

Volumn 9, Issue 4, 2009, Pages 737-741

  Kumar, Manoj ^a   Mehra, R M ^b   Choi, Se Young ^a  

^a Yonsei University   (South Korea)

^b UNIVERSITY OF DELHI   (India)

Author keywords

Epitaxial ZnO:Al films; Pulsed laser deposition; r Plane sapphire

Indexed keywords

ALUMINUM; CARRIER CONCENTRATION; CORUNDUM; ELECTRIC PROPERTIES; EPITAXIAL FILMS; LASERS; METALLIC FILMS; MOLECULAR BEAM EPITAXY; OXYGEN; PRESSURE EFFECTS; PULSED LASER DEPOSITION; SAPPHIRE; SULFUR COMPOUNDS; ZINC OXIDE;

AL-DOPED ZNO; DEEP LEVELS; EFFECT OF OXYGENS; EPITAXIAL RELATIONSHIPS; EPITAXIAL ZNO:AL FILMS; OPTICAL AND ELECTRICAL PROPERTIES; OXYGEN AMBIENT PRESSURES; OXYGEN PRESSURES; PHOTOLUMINESCENCE SPECTRUM; R-PLANE SAPPHIRE; REPETITION RATES; SUBSTRATE TEMPERATURES; ZNO; ZNO:AL FILMS;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 61849141188     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.07.002     Document Type: Article

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