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Science of Advanced Materials

Volumn 4, Issue 2, 2012, Pages 193-198

Microstructural, optical and electrical properties of molybdenum doped ZnO films deposited by magnetron sputtering

(9) Shi, Shiwei a,b,c He, Gang a,b,c Zhang, Miao a,b,c Song, Xueping a,b,c Li, Junlei a,b,c Wang, Xiaoxiao a,b,c Cui, Jingbiao d Chen, Xiaoshuang e Sun, Zhaoqi a,b,c

a ANHUI UNIVERSITY (China)

b BEIJING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS (China)

c Anhui Key Laboratory of Information Materials and Devices (China)

d University of Arkansas ^* (United States)

e SHANGHAI INSTITUTE OF TECHNICAL PHYSICS (China)

Author keywords

Microstructure; Mo doped ZnO; Optical bandgap; Resistivity

Indexed keywords

EID: 84859952411 PISSN: 19472935 EISSN: 19472943 Source Type: Journal
DOI: 10.1166/sam.2012.1272 Document Type: Article

Times cited : (20)

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