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Volumn 518, Issue 17, 2010, Pages 4928-4934

Effect of process conditions on the optoelectronic characteristics of ZnO:Mo thin films prepared by pulsed direct current magnetron sputtering

(5) Lin, Y C a Wang, B L a Yen, W T a Ha, C T b Peng, Chris b

a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION (Taiwan)

b Williams Advanced Materials Technologies Taiwan Co Ltd (Taiwan)

Author keywords

Mo doped ZnO (ZnO:Mo); Pulsed direct current magnetron sputtering; Thin film; Transparent conducting oxide

Indexed keywords

CRYSTALLINITIES; GLASS SUBSTRATES; LOW RESISTIVITY; MO CONTENT; OPTOELECTRONIC CHARACTERISTICS; PROCESS CONDITION; PROCESS PARAMETERS; PULSED DIRECT CURRENT; PULSED FREQUENCY; PULSED MAGNETRON SPUTTERING; SPUTTERING POWER; SUBSTRATE TEMPERATURE; TRANSPARENT CONDUCTING OXIDE; TRANSPARENT CONDUCTIVE; VISIBLE LIGHT; WORK PRESSURES; ZNO;

ENERGY GAP; FILM THICKNESS; MAGNETRON SPUTTERING; MOLYBDENUM; OPTICAL BAND GAPS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

MOLYBDENUM OXIDE;

EID: 77955663710 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2010.03.007 Document Type: Article

Times cited : (66)

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