Electrical and optical properties of molybdenum-doped ZnO transparent conductive thin films prepared by dc reactive magnetron sputtering

Semiconductor Science and Technology

Volumn 24, Issue 12, 2009, Pages

  Wu, Chenguo ^a   Shen, Jie ^a   Ma, Jin ^a   Wang, Sanpo ^a   Zhang, Zhuangjian ^a   Yang, Xiliang ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; CARRIER EFFECTIVE MASS; CHEMICAL STATE; CHEMICAL STATE ANALYSIS; DC REACTIVE MAGNETRON SPUTTERING; DOPED ZNO; ELECTRICAL AND OPTICAL PROPERTIES; ENERGY BAND; EXTINCTION COEFFICIENTS; GLASS SUBSTRATES; HEXAGONAL CRYSTAL STRUCTURE; METALLIC TARGETS; OPTICAL AND ELECTRICAL PROPERTIES; OXIDATION STATE; POLYCRYSTALLINE; TRANSPARENT CONDUCTIVE THIN FILMS; VISIBLE LIGHT REGION; XRD PATTERNS;

BIOACTIVITY; CARRIER CONCENTRATION; CARRIER MOBILITY; CONDUCTIVE FILMS; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; FILM PREPARATION; MOLYBDENUM; MORPHOLOGY; REFRACTIVE INDEX; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; ZINC OXIDE;

SURFACE MORPHOLOGY;

EID: 77954326475     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/24/12/125012     Document Type: Article

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