Influence of oxygen argon ratio on the structural, electrical, optical and thermoelectrical properties of Al-doped ZnO thin films

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 41, Issue 1, 2008, Pages 169-174

  Li, L ^a   Fang, L ^b   Chen, X M ^a   Liu, J ^a   Yang, F F ^c   Li, Q J ^a   Liu, G B ^b   Feng, S J ^a  

^a CHONGQING UNIVERSITY OF POSTS AND TELECOMMUNICATIONS   (China)

^b CHONGQING UNIVERSITY   (China)

^c Institute 53   (China)

Author keywords

Al doped ZnO thin films; Electrical and thermoelectrical properties; Oxygen argon ratio; Structural and optical properties

Indexed keywords

ARGON; ELECTRIC PROPERTIES; INERT GASES; LIGHT; MAGNETRON SPUTTERING; NONMETALS; OXYGEN; REACTIVE SPUTTERING; SEMICONDUCTING ZINC COMPOUNDS; THICK FILMS; THIN FILMS; X RAY ANALYSIS; ZINC; ZINC ALLOYS; ZINC OXIDE;

AL-DOPED ZNO; AL-DOPED ZNO THIN FILMS; DIRECT CURRENT; ELECTRICAL AND THERMOELECTRICAL PROPERTIES; ELECTRICAL PROPERTIES; HIGH-QUALITY; INFLUENCE OF OXYGEN; INFRARED LIGHT; OPTICAL-; OXYGEN ARGON RATIO; REACTIVE MAGNETRON SPUTTERING; STRUCTURAL AND OPTICAL PROPERTIES; VAN DER PAUW METHODS; X-RAY DIFFRACTION;

ALUMINUM;

EID: 52949124830     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2008.07.001     Document Type: Article

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