The sintering behavior, microstructure, and electrical properties of gallium-doped zinc oxide ceramic targets

Journal of the European Ceramic Society

Volumn 34, Issue 15, 2014, Pages 3715-3722

  Wu, Ming Wei ^a   Lai, Pang Hsin ^a   Hong, Chia Hong ^b   Chou, Fang Cheng ^c  

^a NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Electrical properties; GZO; Microstructure final; Sintering; Sputtering target

Indexed keywords

CERAMIC MATERIALS; ELECTRIC PROPERTIES; GALLIUM; GRAIN GROWTH; MICROSTRUCTURE; ZINC;

GZO; MICROSTRUCTURE-FINAL; RELATIVE DENSITY; SINTERING BEHAVIORS; SINTERING TEMPERATURES; SPUTTERED FILMS; SPUTTERING PROCESS; SPUTTERING TARGET;

SINTERING;

EID: 84905565483     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2014.05.022     Document Type: Article

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