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Journal of Alloys and Compounds

Volumn 522, Issue , 2012, Pages 69-73

Dependence of the properties of sputter deposited Al-doped ZnO thin films on base pressure

(2) Kim, Deok Kyu a Kim, Hong Bae b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Chongju University (South Korea)

Author keywords

Al doped ZnO; Base pressure; Figure of merit; Oxygen vacancy; RF magnetron sputtering; ZnO bond

Indexed keywords

AL-DOPED ZNO; BASE PRESSURE; FIGURE OF MERIT; RF-MAGNETRON SPUTTERING; ZNO;

ELECTRIC CONDUCTIVITY; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; OXYGEN VACANCIES; SUBSTRATES; THIN FILMS; ZINC OXIDE;

ALUMINUM;

EID: 84862829169 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2012.01.078 Document Type: Article

Times cited : (29)

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