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Materials Letters

Volumn 63, Issue 28, 2009, Pages 2470-2472

Hall mobilities of Al- and Ga-doped ZnO polycrystals

(3) Wiff, J P a Kinemuchi, Y a Watari, K a

a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST (Japan)

Author keywords

Doping; Hall mobility; Photoluminescence; Thermoelectric properties; ZnO

Indexed keywords

AL-DOPED ZNO; BARRIER EFFECTS; CHARGED DEFECTS; DOPING; ELECTRICAL RESISTIVITY; GA-DOPED ZNO; NEAR BAND EDGE; NEGATIVE SLOPE; POSITIVE DEPENDENCE; POTENTIAL BARRIERS; TEMPERATURE DEPENDENCE; THERMOELECTRIC PROPERTIES; WORK FOCUS; ZNO;

ALUMINUM; BIOACTIVITY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM; HALL MOBILITY; NUCLEAR PHYSICS; PHOTOLUMINESCENCE; POLYCRYSTALS; SEMICONDUCTING ZINC COMPOUNDS; THERMOELECTRIC EQUIPMENT; ZINC OXIDE;

GALVANOMAGNETIC EFFECTS;

EID: 70349257149 PISSN: 0167577X EISSN: None Source Type: Journal
DOI: 10.1016/j.matlet.2009.08.036 Document Type: Article

Times cited : (37)

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