A study on the Raman spectra of Al-doped and Ga-doped ZnO ceramics

Current Applied Physics

Volumn 9, Issue 3, 2009, Pages 651-657

  Jang, M S ^a   Ryu, M K ^a   Yoon, M H ^a   Lee, S H ^a   Kim, H K ^a   Onodera, A ^b   Kojima, S ^c  

^a Pusan National University   (South Korea)

^b HOKKAIDO UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Fano formalism; Raman spectra; ZnO doping

Indexed keywords

ALUMINUM; CERAMIC MATERIALS; ELECTRIC RESISTANCE; GALLIUM; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING ZINC COMPOUNDS; SINGLE CRYSTALS; SOLUBILITY; TERNARY SYSTEMS; ZINC; ZINC OXIDE;

DEGREE OF ASYMMETRIES; DOPING EFFECTS; ELECTRICAL RESISTIVITIES; FANO FORMALISM; FITTING PARAMETERS; LIFE-TIMES; RAMAN MEASUREMENTS; RAMAN PEAKS; RAMAN SPECTRA; SHAPE PARAMETERS; SOLID-STATE REACTIONS; SOLUBILITY LIMITS; X-RAY DIFFRACTIONS; ZNO CERAMICS; ZNO DOPING; ZNO SINGLE CRYSTALS;

DOPING (ADDITIVES);

EID: 58149242581     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2008.05.019     Document Type: Article

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