-
1
-
-
55449106208
-
Phase-change random access memory: A scalable technology
-
Raoux, S. et al. Phase-change random access memory: a scalable technology. IBM J. Res. Dev. 52, 465-479 (2008).
-
(2008)
IBM J. Res. Dev
, vol.52
, pp. 465-479
-
-
Raoux, S.1
-
2
-
-
78650005927
-
Phase change memory
-
Wong, H. et al. Phase change memory. Proc. IEEE 98, 2201-2227 (2010).
-
(2010)
Proc. IEEE
, vol.98
, pp. 2201-2227
-
-
Wong, H.1
-
4
-
-
84861089198
-
Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
-
Kuzum, D., Jeyasingh, R., Lee, B. & Wong, H.-S. P. Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing. Nano Lett. 12, 2179-2186 (2011).
-
(2011)
Nano Lett
, vol.12
, pp. 2179-2186
-
-
Kuzum, D.1
Jeyasingh, R.2
Lee, B.3
Wong, H.-S.P.4
-
5
-
-
84877289051
-
Beyond von-Neumann computing with nanoscale phase-change memory devices
-
Wright, C. D., Hosseini, P. & Diosdado, J. A. V. Beyond von-Neumann computing with nanoscale phase-change memory devices. Adv. Funct. Mater. 23, 2248-2254 (2013).
-
(2013)
Adv. Funct. Mater
, vol.23
, pp. 2248-2254
-
-
Wright, C.D.1
Hosseini, P.2
Diosdado, J.A.V.3
-
6
-
-
84887036324
-
Logic computation in phase change materials by threshold and memory switching
-
Cassinerio, M., Ciocchini, N. & Ielmini, D. Logic computation in phase change materials by threshold and memory switching. Adv. Mater. 25, 5975-5980 (2013).
-
(2013)
Adv. Mater
, vol.25
, pp. 5975-5980
-
-
Cassinerio, M.1
Ciocchini, N.2
Ielmini, D.3
-
7
-
-
79955538512
-
Low-power switching of phasechange materials with carbon nanotube electrodes
-
Xiong, F., Liao, A. D., Estrada, D. & Pop, E. Low-power switching of phasechange materials with carbon nanotube electrodes. Science 332, 568-570 (2011).
-
(2011)
Science
, vol.332
, pp. 568-570
-
-
Xiong, F.1
Liao, A.D.2
Estrada, D.3
Pop, E.4
-
8
-
-
84862594877
-
Breaking the speed limits of phase-change memory
-
Loke, D. et al. Breaking the speed limits of phase-change memory. Science 336, 1566-1569 (2012).
-
(2012)
Science
, vol.336
, pp. 1566-1569
-
-
Loke, D.1
-
9
-
-
0005158609
-
Rapid-phase transitions of GeTe-Sb2 Te3 pseudobinary amorphous thin-films for an optical disk memory
-
Yamada, N., Ohno, E., Nishiuchi, K., Akahira, N. & Takao, M. Rapid-phase transitions of GeTe-Sb2 Te3 pseudobinary amorphous thin-films for an optical disk memory. J. Appl. Phys. 69, 2849-2856 (1991).
-
(1991)
J. Appl. Phys
, vol.69
, pp. 2849-2856
-
-
Yamada, N.1
Ohno, E.2
Nishiuchi, K.3
Akahira, N.4
Takao, M.5
-
10
-
-
42549141873
-
Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memorymaterials
-
DOI 10.1038/nmat2157, PII NMAT2157
-
Hegedüs, J. & Elliott, S. R. Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials. Nat. Mater. 7, 399-405 (2008). (Pubitemid 351596372)
-
(2008)
Nature Materials
, vol.7
, Issue.5
, pp. 399-405
-
-
Hegedus, J.1
Elliott, S.R.2
-
11
-
-
79953077779
-
Distortion-triggered loss of long-range order in solids with bonding energy hierarchy
-
Kolobov, A., Krbal, M., Fons, P., Tominaga, J. & Uruga, T. Distortion-triggered loss of long-range order in solids with bonding energy hierarchy. Nat. Chem. 3, 311-316 (2011).
-
(2011)
Nat. Chem
, vol.3
, pp. 311-316
-
-
Kolobov, A.1
Krbal, M.2
Fons, P.3
Tominaga, J.4
Uruga, T.5
-
12
-
-
79151476642
-
From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials
-
Matsunaga, T. et al. From local structure to nanosecond recrystallization dynamics in AgInSbTe phase-change materials. Nat. Mater. 10, 129-134 (2011).
-
(2011)
Nat. Mater
, vol.10
, pp. 129-134
-
-
Matsunaga, T.1
-
13
-
-
84897416574
-
Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory
-
Lee, B.-S. et al. Distribution of nanoscale nuclei in the amorphous dome of a phase change random access memory. Appl. Phys. Lett. 104, 071907 (2014).
-
(2014)
Appl. Phys. Lett
, vol.104
, pp. 071907
-
-
Lee, B.-S.1
-
14
-
-
84862777262
-
Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry
-
Orava, J., Greer, A. L., Gholipour, B., Hewak, D. W. & Smith, C. E. Characterization of supercooled liquid Ge2Sb2Te5 and its crystallization by ultrafast-heating calorimetry. Nat. Mater. 11, 279-283 (2012).
-
(2012)
Nat. Mater
, vol.11
, pp. 279-283
-
-
Orava, J.1
Greer, A.L.2
Gholipour, B.3
Hewak, D.W.4
Smith, C.E.5
-
15
-
-
84890900759
-
Measurement of crystal growth velocity in a melt-quenched phase-change material
-
Salinga, M. et al. Measurement of crystal growth velocity in a melt-quenched phase-change material. Nat. Commun. 4, 2371 (2013).
-
(2013)
Nat. Commun
, vol.4
, pp. 2371
-
-
Salinga, M.1
-
16
-
-
0018732493
-
ON the approximation of the free energy change of crystallization
-
DOI 10.1016/0001-6160(79)90076-2
-
Thompson, C. V. & Spaepen, F. On the approximation of the free energy change on crystallization. Acta Metall. 27, 1855-1859 (1979). (Pubitemid 10442285)
-
(1979)
Acta Metallurgica
, vol.27
, Issue.12
, pp. 1855-1859
-
-
Thompson Carl, V.1
Spaepen Frans2
-
17
-
-
0035826241
-
Supercooled liquids and the glass transition
-
DOI 10.1038/35065704
-
Debenedetti, P. G. & Stillinger, F. H. Supercooled liquids and the glass transition. Nature 410, 259-267 (2001). (Pubitemid 32218700)
-
(2001)
Nature
, vol.410
, Issue.6825
, pp. 259-267
-
-
Debenedetti, P.G.1
Stillinger, F.H.2
-
18
-
-
0041416856
-
The influence of the cooling rate on the glass transition and the glassy state in three-dimensional dense polymer melts: A Monte Carlo study
-
Baschnagel, J., Binder, K. & Wittmann, H. P. The influence of the cooling rate on the glass transition and the glassy state in three-dimensional dense polymer melts: a Monte Carlo study. J. Phys. Condens. Matter 5, 1597 (1993).
-
(1993)
J. Phys. Condens. Matter
, vol.5
, pp. 1597
-
-
Baschnagel, J.1
Binder, K.2
Wittmann, H.P.3
-
19
-
-
0037109594
-
Cooling rate dependence of the glass transition temperature of polymer melts: Molecular dynamics study
-
DOI 10.1063/1.1508366
-
Buchholz, J., Paul, W., Varnik, F. & Binder, K. Cooling rate dependence of the glass transition temperature of polymer melts: molecular dynamics study. J. Chem. Phys. 117, 7364-7372 (2002). (Pubitemid 35354182)
-
(2002)
Journal of Chemical Physics
, vol.117
, Issue.15
, pp. 7364-7372
-
-
Buchholz, J.1
Paul, W.2
Varnik, F.3
Binder, K.4
-
20
-
-
34248672256
-
Influence of the cooling rate on the glass transition temperature and the structural properties of glassy GeS2: An ab initio molecular dynamics study
-
Le Roux, S. & Jund, P. Influence of the cooling rate on the glass transition temperature and the structural properties of glassy GeS2: an ab initio molecular dynamics study. J. Phys. Condens. Matter 19, 196102 (2007).
-
(2007)
J. Phys. Condens. Matter
, vol.19
, pp. 196102
-
-
Le Roux, S.1
Jund, P.2
-
21
-
-
4944263879
-
Influence of dielectric capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films
-
Njoroge, W. K., Dieker, H. & Wuttig, M. Influence of dielectric capping layers on the crystallization kinetics of Ag5In6Sb59Te30 films. J. Appl. Phys. 96, 2624-2627 (2004).
-
(2004)
J. Appl. Phys
, vol.96
, pp. 2624-2627
-
-
Njoroge, W.K.1
Dieker, H.2
Wuttig, M.3
-
22
-
-
69549126428
-
Threshold field of phase change memory materials measured using phase change bridge devices
-
Krebs, D. et al. Threshold field of phase change memory materials measured using phase change bridge devices. Appl. Phys. Lett. 95, 082101 (2009).
-
(2009)
Appl. Phys. Lett
, vol.95
, pp. 082101
-
-
Krebs, D.1
-
23
-
-
84865849945
-
Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers
-
Orava, J., Greer, A. L., Gholipour, B., Hewak, D. W. & Smith, C. E. Ultra-fast calorimetry study of Ge2Sb2Te5 crystallization between dielectric layers. Appl. Phys. Lett. 101, 091906 (2012).
-
(2012)
Appl. Phys. Lett
, vol.101
, pp. 091906
-
-
Orava, J.1
Greer, A.L.2
Gholipour, B.3
Hewak, D.W.4
Smith, C.E.5
-
24
-
-
79955610457
-
Design rules for phase-change materials in data storage applications
-
Lencer, D., Salinga, M. &Wuttig, M. Design rules for phase-change materials in data storage applications. Adv. Mater. 23, 2030-2058 (2011).
-
(2011)
Adv. Mater
, vol.23
, pp. 2030-2058
-
-
Lencer, D.1
Salinga, M.2
Wuttig, M.3
-
25
-
-
0242272436
-
Viscosity and elastic constants of thin films of amorphous Te alloys used for optical data storage
-
Kalb, J., Spaepen, F., Pedersen, T. P. L. & Wuttig, M. Viscosity and elastic constants of thin films of amorphous Te alloys used for optical data storage. J. Appl. Phys. 94, 4908-4912 (2003).
-
(2003)
J. Appl. Phys
, vol.94
, pp. 4908-4912
-
-
Kalb, J.1
Spaepen, F.2
Pedersen, T.P.L.3
Wuttig, M.4
-
26
-
-
84862138494
-
Observation and modelling of polycrystalline grain formation in Ge2Sb2Te5
-
Burr, G. W. et al. Observation and modelling of polycrystalline grain formation in Ge2Sb2Te5. J. Appl. Phys. 111, 104308 (2012).
-
(2012)
J. Appl. Phys
, vol.111
, pp. 104308
-
-
Burr, G.W.1
-
27
-
-
45149123944
-
Threshold switching and phase transition numerical models for phase change memory simulations
-
Redaelli, A., Pirovano, A., Benvenuti, A. & Lacaita, A. L. Threshold switching and phase transition numerical models for phase change memory simulations. J. Appl. Phys. 103, 111101 (2008).
-
(2008)
J. Appl. Phys
, vol.103
, pp. 111101
-
-
Redaelli, A.1
Pirovano, A.2
Benvenuti, A.3
Lacaita, A.L.4
-
28
-
-
54849374800
-
The impact of thermal boundary resistance in phase-change memory devices
-
Reifenberg, J. P., Kencke, D. L. & Goodson, K. E. The impact of thermal boundary resistance in phase-change memory devices. IEEE Electron Device Lett. 29, 1112-1114 (2008).
-
(2008)
IEEE Electron Device Lett
, vol.29
, pp. 1112-1114
-
-
Reifenberg, J.P.1
Kencke, D.L.2
Goodson, K.E.3
-
29
-
-
84863307388
-
Threshold switching via electric field induced crystallization in phase-change memory devices
-
Diosdado, J. A. V., Ashwin, P., Kohary, K. I. & Wright, C. D. Threshold switching via electric field induced crystallization in phase-change memory devices. Appl. Phys. Lett. 100, 253105 (2012).
-
(2012)
Appl. Phys. Lett
, vol.100
, pp. 253105
-
-
Diosdado, J.A.V.1
Ashwin, P.2
Kohary, K.I.3
Wright, C.D.4
-
30
-
-
84859214672
-
Internal temperature extraction in phase-change memory cells during the reset operation
-
Boniardi, M., Redaelli, A., Tortorelli, I., Pellizzer, F. & Pirovano, A. Internal temperature extraction in phase-change memory cells during the reset operation. IEEE Electron Device Lett. 33, 594-596 (2012).
-
(2012)
IEEE Electron Device Lett
, vol.33
, pp. 594-596
-
-
Boniardi, M.1
Redaelli, A.2
Tortorelli, I.3
Pellizzer, F.4
Pirovano, A.5
-
31
-
-
80655132012
-
Non-resistance-based cell-state metric for phase-change memory
-
Sebastian, A., Papandreou, N., Pantazi, A., Pozidis, H. & Eleftheriou, E. Non-resistance-based cell-state metric for phase-change memory. J. Appl. Phys. 110, 084505 (2011).
-
(2011)
J. Appl. Phys
, vol.110
, pp. 084505
-
-
Sebastian, A.1
Papandreou, N.2
Pantazi, A.3
Pozidis, H.4
Eleftheriou, E.5
-
32
-
-
34548647299
-
Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
-
Ielmini, D. & Zhang, Y. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices. J. Appl. Phys. 102, 054517 (2007).
-
(2007)
J. Appl. Phys
, vol.102
, pp. 054517
-
-
Ielmini, D.1
Zhang, Y.2
-
33
-
-
72449163357
-
Viscosity of glass-forming liquids
-
Mauro, J. C., Yue, Y., Ellison, A. J., Gupta, P. K. & Allan, D. C. Viscosity of glass-forming liquids. Proc. Natl Acad. Sci. 106, 19780-19784 (2009).
-
(2009)
Proc. Natl Acad. Sci
, vol.106
, pp. 19780-19784
-
-
Mauro, J.C.1
Yue, Y.2
Ellison, A.J.3
Gupta, P.K.4
Allan, D.C.5
-
35
-
-
3142702784
-
Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous te alloys
-
Kalb, J., Spaepen, F. & Wuttig, M. Atomic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous te alloys. Appl. Phys. Lett. 84, 5240-5242 (2004).
-
(2004)
Appl. Phys. Lett
, vol.84
, pp. 5240-5242
-
-
Kalb, J.1
Spaepen, F.2
Wuttig, M.3
-
36
-
-
38349183604
-
Crystal growth kinetics exhibit a fragilitydependent decoupling from viscosity
-
Ediger, M., Harrowell, P. & Yu, L. Crystal growth kinetics exhibit a fragilitydependent decoupling from viscosity. J. Chem. Phys. 128, 034709 (2008).
-
(2008)
J. Chem. Phys
, vol.128
, pp. 034709
-
-
Ediger, M.1
Harrowell, P.2
Yu, L.3
-
37
-
-
33847681762
-
Recovery and drift dynamics of resistance and threshold voltages in phase-change memories
-
DOI 10.1109/TED.2006.888752
-
Ielmini, D., Lacaita, A. L. & Mantegazza, D. Recovery and drift dynamics of resistance and threshold voltages in phase-change memories. IEEE Trans. Electron Devices 54, 308-315 (2007). (Pubitemid 46358417)
-
(2007)
IEEE Transactions on Electron Devices
, vol.54
, Issue.2
, pp. 308-315
-
-
Ielmini, D.1
Lacaita, A.L.2
Mantegazza, D.3
-
38
-
-
84857026477
-
Drift-resilient cell-state metric for multilevel phasechange memory
-
IEEE
-
Papandreou, N. et al. in Drift-resilient cell-state metric for multilevel phasechange memory. Proc. IEEE Int. Electron Devices Meeting 3-5 (IEEE, 2011).
-
(2011)
Proc. IEEE Int. Electron Devices Meeting
, pp. 3-5
-
-
Papandreou, N.1
-
39
-
-
11144230051
-
Reliability study of phase-change nonvolatile memories
-
Pirovano, A. et al. Reliability study of phase-change nonvolatile memories. IEEE Trans. Device Mater. Reliability 4, 422-427 (2004).
-
(2004)
IEEE Trans. Device Mater. Reliability
, vol.4
, pp. 422-427
-
-
Pirovano, A.1
-
40
-
-
35148862022
-
Analytical modeling of chalcogenide crystallization for PCM data-retention extrapolation
-
DOI 10.1109/TED.2007.904976
-
Russo, U., Ielmini, D. & Lacaita, A. L. Analytical modelling of chalcogenide crystallization for PCM data-retention extrapolation. IEEE Trans. Electron Devices 54, 2769-2777 (2007). (Pubitemid 47534496)
-
(2007)
IEEE Transactions on Electron Devices
, vol.54
, Issue.10
, pp. 2769-2777
-
-
Russo, U.1
Ielmini, D.2
Lacaita, A.L.3
-
41
-
-
79961104369
-
Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory
-
Oosthoek, J. L. M. et al. Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory. J. Appl. Phys. 110, 024505 (2011).
-
(2011)
J. Appl. Phys
, vol.110
, pp. 024505
-
-
Oosthoek, J.L.M.1
-
42
-
-
80052935794
-
Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices
-
Padilla, A. et al. Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices. J. Appl. Phys. 110, 054501 (2011).
-
(2011)
J. Appl. Phys
, vol.110
, pp. 054501
-
-
Padilla, A.1
-
45
-
-
0019026872
-
Threshold switching in chalcogenide-glass thin-films
-
Adler, D., Shur, M. S., Silver, M. & Ovshinsky, S. R. Threshold switching in chalcogenide-glass thin-films. J. Appl. Phys. 51, 3289-3309 (1980).
-
(1980)
J. Appl. Phys
, vol.51
, pp. 3289-3309
-
-
Adler, D.1
Shur, M.S.2
Silver, M.3
Ovshinsky, S.R.4
-
46
-
-
1642327470
-
Electronic switching in phase-change memories
-
Pirovano, A., Lacaita, A. L., Benvenuti, A., Pellizzer, F. & Bez, R. Electronic switching in phase-change memories. IEEE Trans. Electron Devices 51, 452-459 (2004).
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, pp. 452-459
-
-
Pirovano, A.1
Lacaita, A.L.2
Benvenuti, A.3
Pellizzer, F.4
Bez, R.5
-
47
-
-
84867900834
-
Modelling of thresholdvoltage drift in phase-change memory (PCM) devices
-
Ciocchini, N., Cassinerio, M., Fugazza, D. & Ielmini, D. Modelling of thresholdvoltage drift in phase-change memory (PCM) devices. IEEE Trans. Electron Devices 59, 3084-3090 (2012).
-
(2012)
IEEE Trans. Electron Devices
, vol.59
, pp. 3084-3090
-
-
Ciocchini, N.1
Cassinerio, M.2
Fugazza, D.3
Ielmini, D.4
-
48
-
-
77954213882
-
Estimation of amorphous fraction in multilevel phasechange memory cells
-
Papandreou, N. et al. Estimation of amorphous fraction in multilevel phasechange memory cells. Solid State Electron. 54, 991-996 (2010).
-
(2010)
Solid State Electron
, vol.54
, pp. 991-996
-
-
Papandreou, N.1
|