Drift-resilient cell-state metric for multilevel phase-change memory

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Papandreou, N ^a   Sebastian, A ^a   Pantazi, A ^a   Breitwisch, M ^b   Lam, C ^b   Pozidis, H ^a   Eleftheriou, E ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL STATE; PHASE CHANGES; PHASE CONFIGURATIONS; SENSING RESOLUTION; TEST DEVICE;

CYTOLOGY; ELECTRON DEVICES; PHASE CHANGE MEMORY;

CELLS;

EID: 84857026477     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131482     Document Type: Conference Paper

References (8)

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