Distortion-triggered loss of long-range order in solids with bonding energy hierarchy

Nature Chemistry

Volumn 3, Issue 4, 2011, Pages 311-316

  Kolobov, A V ^a,b   Krbal, M ^a   Fons, P ^a,b   Tominaga, J ^a   Uruga, T ^b  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY; ANTIMONY; GERMANIUM; TELLURIUM;

ARTICLE; CHEMISTRY; CONFORMATION; MOLECULAR DYNAMICS; PHASE TRANSITION; TEMPERATURE; X RAY ABSORPTION SPECTROSCOPY;

ALLOYS; ANTIMONY; GERMANIUM; MOLECULAR CONFORMATION; MOLECULAR DYNAMICS SIMULATION; PHASE TRANSITION; TELLURIUM; TEMPERATURE; X-RAY ABSORPTION SPECTROSCOPY;

EID: 79953077779     PISSN: 17554330     EISSN: 17554349     Source Type: Journal    
DOI: 10.1038/nchem.1007     Document Type: Article

References (50)

1. Wuttig, M. & Yamada, N. Phase-change materials for rewriteable data storage. Nature Mater. 6, 824-832 (2007). (Pubitemid 350050578)
2. Raoux, S.,Welnic,W. & Ielmini, D. Phase change materials and their application to nonvolatile memories. Chem. Rev. 110, 240-267 (2010).
3. Ohta, T. & Ovshinsky, S. R. Phase-change optical data storage media, in Photo-Induced Metastability in Amorphous Semiconductors, 310-326 (Wiley-VCH, 2003).
4. Lacaita, A. Phase change memories: State-of-the-art, challenges and perspectives. Sol. State Electron. 50, 24-31 (2006). (Pubitemid 43061373)
5. Lencer, D., Salinga, M., Grabowski, B., Hickel, T. & Wuttig, M. A map for phasechange materials. Nature Mater. 7, 972-977 (2008).
6. Yamada, N. & Matsunaga, T. Structure of laser-crystallised Ge2Sb2+xTe5 sputtered thin films for use in optical memory. J. Appl. Phys. 88, 7020-7028 (2000).
7. Kolobov, A. et al. Understanding the phase-change mechanism of rewritable optical media. Nature Mater. 3, 703-708 (2004).
8. 5. Appl. Phys. Lett. 86, 081904 (2005).
9. Shayduk, R. & Braun, W. Epitaxial films for Ge-Sb-Te phase change memory. J. Cryst. Growth 311, 2215-2219 (2009).
10. Welnic, W. et al. Unravelling the interplay of local structure and physical properties in phase-change materials. Nature Mater. 5, 56-62 (2005).
11. Shportko, K. et al. Resonant bonding in crystalline phase-change materials. Nature Mater. 7, 653-658 (2008).
12. Lucovsky, G. & White, R. Effects of resonance bonding on the properties of crystalline and amorphous semiconductors. Phys. Rev. B 8, 660-667 (1973).
13. 5: Ring statistics analogy between the crystal and amorphous states. Appl. Phys. Lett. 89, 201910 (2006).
14. Caravati, S., Bernasconi, M., Kühne, T., Krack, M. & Parrinello, M. Coexistence of tetrahedral- and octahedral-like sites in amorphous phase change materials. Appl. Phys. Lett. 91, 171906 (2007).
15. 5. Phys. Rev. Lett. 96, 255501 (2006).
16. 5 and GeTe. Phys. Rev. B 76, 235201 (2007).
17. 5 and GeSb2Te4. Phys. Rev. B 77, 035202 (2008).
18. Hegedüs, J. & Elliott, S. Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials. Nature Mater. 7, 399-405 (2008). (Pubitemid 351596372)
19. Gaspard, J.-P., Pellegatti, A., Marinelli, F. & Bichara, C. Peierls instability in covalent structures I. electronic structure, cohesion and the Z = 8-N rule. Phil. Mag. B 77, 727-744 (1998). (Pubitemid 128613196)
20. deNeufville, J. Chemical aspects of glass formation in telluride systems. J. Non- Crystal. Solids 8, 85-105 (1972).
21. Rahman, S., Venkata Ramana, M. & Sivarama Sastry, G. Calorimetric measurements on Ge-Bi-Se-Te glasses. J. Mater. Sci. Lett. 10, 792-794 (1991).
22. Luo, Y. Comprehensive Handbook of Chemical Bond Energies (CRC, 2007).
23. 5 phase change material in its amorphous, cubic, and hexagonal phases. J. Appl. Phys. 97, 093509 (2005).
24. 5 films. Jpn J. Appl. Phys. 44, 7340-7344 (2005). (Pubitemid 43160521)
25. Mott, N. F. & Davis, E. A. Electronic Processes in Non-Crystalline Materials. 2nd edn (Clarendon Press Oxford, 1979).
26. Itoh, N. & Stoneham, A. M. Materials Modification by Electronic Excitation (Cambridge Univ. Press, 2001).
27. Glazov, V., Chizhevskaya, S. & Glagoleva, N. Liquid Semiconductors (Plenum Press, 1969).
28. Santoh, H., Hongo, Y., Tajima, K., Konishi, M. & Saiki, T. Sub-picosecond non-melting structure change in a GeSbTe film induced by femtosecond pulse excitation, in Proceedings of the 2009 EPCOS Meeting, Aachen Germany (2009).
29. Makino, K., Tominaga, J. & Hase, M. Ultrafast optical manipulation of atomic arrangements in chalcogenide alloy memory materials. Opt. Express 19, 1260-1270 (2011).
30. Poborchii, V. V., Kolobov, A. V. & Tanaka, K. Photomelting of selenium at low temperature. Appl. Phys. Lett. 74, 215-217 (1999). (Pubitemid 129615848)
31. Roy, A., Kolobov, A. & Tanaka, K. Laser-induced suppression of photocrystallization rate in amorphous selenium films. J. Appl. Phys. 83, 4951-4956 (1998). (Pubitemid 128594046)
32. Elliott, S. & Kolobov, A. Athermal light-induced vitrification of As50Se50 films. J. Non-Crystal. Solids 128, 216-220 (1991). (Pubitemid 21700983)
33. Frumar, M., Firth, A. & Owen, A. Optically induced crystal-to-amorphous transition in As2S3. J. Non-Crystal. Solids 192, 447 (1995).
34. 5. Phys. Rev. B 82, 041203 (2010).
35. Shimakawa, K., Kolobov, A. & Elliott, S. Photoinduced effects and metastability in amorphous semiconductors and insulators. Adv. Phys. 44, 475-588 (1995).
36. Hisakuni, H. & Tanaka, K. Optical microfabrication of chalcogenide glasses. Science 270, 974-975 (1995).
37. Yannopoulos, S. & Trunov, M. Photoplastic effects in chalcogenide glasses: A review. Phys. Status Solids (b) 246, 1773-1785 (2009).
38. Lyubin, V. & Klebanov, M. Photoinduced generation and reorientation of linear dichroism in AsSe glassy films. Phys. Rev. B 53, 11924-11926 (1996).
39. Krecmer, P. et al. Reversible nanocontraction and dilatation in a solid induced by polarized light. Science 277, 1799-1802 (1997). (Pubitemid 27449187)
40. Saliminia, A., Galstian, T. V. & Villeneuve, A. Optical field-induced mass transport in As2S3 chalcogenide glasses. Phys. Rev. Lett. 85, 4112-4115 (2000). (Pubitemid 32020580)
41. Trunov, M. Polarization-dependent laser-induced giant mass transport in glassy semiconductors. JETP Lett. 86, 313-316 (2007).
42. Shi, L. Optical memory: From 1st to 3rd generation and its future, in Phase- Change Materials: Science and Applications, 251-284 (Springer, 2009).
43. Huang, B. & Robertson, J. Bonding origin of optical contrast in phase-change memory materials. Phys. Rev. B 81, 081204R (2010).
44. Burr, G. W. et al. Phase change memory technology. J. Vac. Sci. Technol. B 28, 223-262 (2010).
45. Ravel, B. & Newville, M. ATHENA, ARTEMIS, HEPHAESTUS: Data analysis for X-ray absorption spectroscopy using IFEFFIT. J. Synchrotron Radiat. 12, 537-541 (2005). (Pubitemid 41557599)
46. Clark, S. et al. First principles methods using CASTEP. Zeitschrift fürr Kristallographie 220, 567-570 (2005). (Pubitemid 40778242)
47. Ceperley, D. & Alder, B. Ground state of the electron gas by a stochastic method. Phys. Rev. Lett. 45, 566-569 (1980).
48. Perdew, J. & Zunger, A. Self-interaction correction to density-functional approximations for many-electron systems. Phys. Rev. B 23, 5048-5079 (1981).
49. Pfrommer, B. G., Cote, M., Louie, S. G. & Cohen, M. L. Relaxation of crystals with the quasi-Newton method. J. Comput. Phys. 131, 133-140 (1997).
50. Caravati, S., Bernasconi, M., Kuehne, T., Krack, M. & Parrinello, M. Unravelling the mechanism of pressure induced amorphization of phase change materials. Phys. Rev. Lett. 102, 205502 (2009).