Internal temperature extraction in phase-change memory cells during the reset operation

IEEE Electron Device Letters

Volumn 33, Issue 4, 2012, Pages 594-596

  Boniardi, Mattia ^a   Redaelli, Andrea ^a   Tortorelli, Innocenzo ^a   Pellizzer, Fabio ^a   Pirovano, Agostino ^a  

^a Micron Semiconductor Italia   (Italy)

Author keywords

Chalcogenide materials; GeSbTe (GST) alloys; melting temperature; phase change memory; scaling analysis; thermal resistance

Indexed keywords

CELL ARCHITECTURES; CELL BEHAVIORS; CHALCOGENIDE COMPOUND; CHALCOGENIDE MATERIALS; ELECTRICAL PULSE; ELECTRO-THERMAL SIMULATION; EXPERIMENTAL METHODS; GAIN INSIGHT; INTERNAL TEMPERATURE; MEMORY CELL; PHASE CHANGE; PHASE CHANGES; PHASE-CHANGE MEMORY TECHNOLOGIES; PROGRAM OPERATION; SCALING ANALYSIS; SCALING PREDICTION; STABLE STATE; TEMPERATURE CONDITIONS;

AMORPHOUS ALLOYS; AMORPHOUS MATERIALS; CHALCOGENIDES; HEAT RESISTANCE; MELTING POINT; SEMICONDUCTOR STORAGE; THERMODYNAMIC PROPERTIES;

PHASE CHANGE MEMORY;

EID: 84859214672     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2185674     Document Type: Article

References (11)

1. R. Bez, " Chalcogenide PCM: A memory technology for next decade, " in IEDM Tech. Dig., 2009, pp. 1-4.
2. G. Servalli, " A 45 nm generation phase change memory technology, " in IEDM Tech. Dig., 2009, pp. 1-4.
3. D. Ahn, S. Cho, H. Horii, D. Im, I. Kim, G. Oh, S. Park, M. Kang, S. Nam, and S. Chung, " PRAM technology: From non volatility to high performances, " in Proc. EPCOS, 2010, pp. 87-91.
4. S. R. Ovshinsky, " Reversible electrical switching phenomena in disordered structures, " Phys. Rev. Lett., vol. 21, no. 20, pp. 1450-1453, Nov. 1968.
5. A. Pirovano, A. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, " Electronic switching in phase-change memories, " IEEE Trans. Electron Devices, vol. 51, no. 3, pp. 452-459, Mar. 2004.
6. A. Lacaita, A. Redaelli, D. Ielmini, F. Pellizzer, A. Pirovano, A. Benvenuti, and R. Bez, " Electrothermal and phase-change dynamics in chalcogenide-based memories, " in IEDM Tech. Dig., 2004, pp. 911-914.
7. A. Redaelli, A. Pirovano, A. Benvenuti, and A. L. Lacaita, " Threshold switching and phase transition numerical models for phase change memory simulations, " J. Appl. Phys., vol. 103, no. 11, p. 111 101, Jun. 2008.
8. F. Pellizzer, A. Benvenuti, B. Gleixner, Y. Kim, B. Johnson, M. Magistretti, T. Marangon, A. Pirovano, R. Bez, and G. Atwood, " A 90 nm phase change memory technology for stand-alone non-volatile memory applications, " in VLSI Symp. Tech. Dig., 2006, pp. 122-123.
9. M. Boniardi, A. Redaelli, A. Pirovano, I. Tortorelli, D. Ielmini, and F. Pellizzer, " A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5, " J. Appl. Phys., vol. 105, no. 8, p. 084506, Apr. 2009.
10. A. Pirovano, A. Lacaita, A. Benvenuti, F. Pellizzer, S. Hudgens, and R. Bez, " Scaling analysis of phase-change memory technology, " in IEDM Tech. Dig., 2003, pp. 29. 6. 1-29. 6. 4.
11. M. Boniardi and D. Ielmini, " Physical origin of the resistance drift exponent in amorphous phase change materials, " Appl. Phys. Lett., vol. 98, no. 24, p. 243 506, Jun. 2011.