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Volumn 100, Issue 25, 2012, Pages

Threshold switching via electric field induced crystallization in phase-change memory devices

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; ELECTRICAL SWITCHING; FIELD INDUCED; HIGH ELECTRIC FIELDS; PHASE CHANGES; REALISTIC SIMULATION; THRESHOLD SWITCHING; TRAP STATE;

EID: 84863307388     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729551     Document Type: Article
Times cited : (29)

References (29)
  • 6
  • 18
    • 32844461228 scopus 로고    scopus 로고
    • 10.1103/PhysRevE.73.016703
    • S. Vedantam and B. S. V. Patnaik, Phys. Rev. E 73, 016703 (2006). 10.1103/PhysRevE.73.016703
    • (2006) Phys. Rev. e , vol.73 , pp. 016703
    • Vedantam, S.1    Patnaik, B.S.V.2
  • 20
    • 33645429016 scopus 로고
    • 10.1021/j100540a008
    • D. T. Gillespie, J. Phys. Chem. 81, 2340 (1977). 10.1021/j100540a008
    • (1977) J. Phys. Chem. , vol.81 , pp. 2340
    • Gillespie, D.T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.