The impact of thermal boundary resistance in phase-change memory devices

IEEE Electron Device Letters

Volumn 29, Issue 10, 2008, Pages 1112-1114

  Reifenberg, John P ^a   Kencke, David L ^b   Goodson, Kenneth E ^a  

^a Stanford University   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

Design automation; Nonvolatile memories; Phase change memory (PCM); Thermal boundary resistance

Indexed keywords

DATA STORAGE EQUIPMENT; IMPACT RESISTANCE; PASSIVATION; PHASE CHANGE MEMORY;

DESIGN AUTOMATION; NONVOLATILE MEMORIES; PHASE-CHANGE MEMORY (PCM); THERMAL BOUNDARY RESISTANCE;

PHASE INTERFACES;

EID: 54849374800     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.2003012     Document Type: Article

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