Logic computation in phase change materials by threshold and memory switching

Advanced Materials

Volumn 25, Issue 41, 2013, Pages 5975-5980

  Cassinerio, M ^a   Ciocchini, N ^a   Ielmini, D ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

boolean logic; memristors; non volatile logic; non volatile storage; phase change materials

Indexed keywords

BOOLEAN LOGIC; CHALCOGENIDE MATERIALS; ELECTRICAL STIMULI; HIGH-SPEED SWITCHING; HYSTERETIC DEVICES; NON-VOLATILE; NON-VOLATILE LOGIC; RESISTANCE SWITCHING;

LOW POWER ELECTRONICS; MEMRISTORS; PASSIVE FILTERS; PHASE CHANGE MATERIALS; SWITCHING;

COMPUTATION THEORY;

ARTICLE; CRYSTALLIZATION; INFORMATION SCIENCE; LOGIC; MEMRISTORS; NON-VOLATILE LOGIC; NON-VOLATILE STORAGE; PHASE CHANGE MATERIALS; SEMICONDUCTOR;

BOOLEAN LOGIC; MEMRISTORS; NON-VOLATILE LOGIC; NON-VOLATILE STORAGE; PHASE CHANGE MATERIALS;

CRYSTALLIZATION; LOGIC; TRANSISTORS, ELECTRONIC;

EID: 84887036324     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201301940     Document Type: Article

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