Non-resistance-based cell-state metric for phase-change memory

Journal of Applied Physics

Volumn 110, Issue 8, 2011, Pages

  Sebastian, Abu ^a   Papandreou, Nikolaos ^a   Pantazi, Angeliki ^a   Pozidis, Haralampos ^a   Eleftheriou, Evangelos ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CELL STATE; ELECTRICAL RESISTANCES; HIGH RESISTANCE; INPUT POWER; PHASE CHANGES; PHASE CONFIGURATIONS; SIGNAL TO NOISE; TEMPORAL DRIFTS;

SIGNAL TO NOISE RATIO;

PHASE CHANGE MEMORY;

EID: 80655132012     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3653279     Document Type: Article

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