Recovery and drift dynamics of resistance and threshold voltages in phase-change memories

IEEE Transactions on Electron Devices

Volumn 54, Issue 2, 2007, Pages 308-315

  Ielmini, Daniele ^a,b   Lacaita, Andrea L ^a,b   Mantegazza, Davide ^a,b  

^a POLITECNICO DI MILANO   (Italy)

^b IUNET Italian University Nano Electronics Team   (Italy)

Author keywords

Chalcogenide materials; Nonvolatile memories; Phase change memories (PCMs); Threshold switching

Indexed keywords

AMORPHOUS CHALCOGENIDE; ELECTRONIC SWITCHING; NONVOLATILE MEMORIES; THRESHOLD SWITCHING;

AMORPHOUS MATERIALS; CHALCOGENIDES; ELECTRIC RESISTANCE; SWITCHING SYSTEMS; THRESHOLD VOLTAGE;

PHASE CHANGE MEMORY;

EID: 33847681762     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.888752     Document Type: Article

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