Estimation of amorphous fraction in multilevel phase-change memory cells

Solid-State Electronics

Volumn 54, Issue 9, 2010, Pages 991-996

  Papandreou, N ^a   Pantazi, A ^a   Sebastian, A ^a   Eleftheriou, E ^a   Breitwisch, M ^b   Lam, C ^b   Pozidis, H ^a  

^a IBM RESEARCH ZURICH   (Switzerland)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

Amorphous semiconductors; Chalcogenide materials; Multilevel cell (MLC); Non volatile memory; Phase change memory (PCM); Threshold switching

Indexed keywords

AMORPHOUS MATERIALS; AMORPHOUS SEMICONDUCTORS; CELLS; CHALCOGENIDES; CURRENT VOLTAGE CHARACTERISTICS; CYTOLOGY; ELECTRIC VARIABLES MEASUREMENT; MEMORY ARCHITECTURE; PHASE CHANGE MATERIALS; SEMICONDUCTOR STORAGE; THRESHOLD VOLTAGE;

CHALCOGENIDE MATERIALS; MULTI LEVEL CELL (MLC); NON-VOLATILE MEMORY; PHASE CHANGE MEMORY (PCM); THRESHOLD SWITCHING;

PHASE CHANGE MEMORY;

EID: 77954213882     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.04.020     Document Type: Conference Paper

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