Reliability study of phase-change nonvolatile memories

IEEE Transactions on Device and Materials Reliability

Volumn 4, Issue 3, 2004, Pages 422-426

  Pirovano, Agostino ^a   Redaelli, Andrea ^b   Pellizzer, Fabio ^a   Ottogalli, Federica ^a   Tosi, Marina ^a   Ielmini, Daniele ^b   Lacaita, Andrea L ^b   Bez, Roberto ^a  

^a STMICROELECTRONICS   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Chalcogenides; Nonvolatile memories; Phase change memories

Indexed keywords

CMOS INTEGRATED CIRCUITS; DATA REDUCTION; FLASH MEMORY; MATHEMATICAL MODELS; PHASE CHANGING CIRCUITS; PHASE TRANSITIONS; PULSE GENERATORS;

CHALCOGENIDES; ELECTRICAL PULSES; PHASE-CHANGE MEMORIES;

NONVOLATILE STORAGE;

EID: 11144230051     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2004.836724     Document Type: Article

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