Evolution of cell resistance, threshold voltage and crystallization temperature during cycling of line-cell phase-change random access memory

Journal of Applied Physics

Volumn 110, Issue 2, 2011, Pages

  Oosthoek, J L M ^a   Attenborough, K ^b   Hurkx, G A M ^b   Jedema, F J ^b   Gravesteijn, D J ^b   Kooi, B J ^a  

^a UNIVERSITY OF GRONINGEN   (Netherlands)

^b NXP TSMC Research Center   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

CELL CYCLING; CELL RESISTANCE; CRYSTALLIZATION TEMPERATURE; E-BEAM LITHOGRAPHY; END OF LIVES; LIFE PHASE; PHASE CHANGE; PHASE-CHANGE RANDOM ACCESS MEMORY; RESET PULSE; SINGLE CELLS; TIME-DEPENDENT;

ACTIVATION ENERGY; CRYSTAL GROWTH; CRYSTALLIZATION; CYTOLOGY; PHASE CHANGE MEMORY; RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE; TRANSIENTS;

CELLS;

EID: 79961104369     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3603025     Document Type: Article

References (36)

1. S. Raoux, Annu. Rev. Mater. Res. 39, 25 (2009). 10.1146/annurev-matsci- 082908-145405
2. M. H. R. Lankhorst, B. Ketelaars, and R. A. M. Wolters, Nature Mater. 4, 347 (2005). 10.1038/nmat1350
3. M. Gill, T. Lowrey, and J. Park, Digest of Technical Papers of International Solid-State Circuits Conference, San Francisco, CA (2002), p. 202.
4. D. H. Im, J. I. Lee, S. L. Cho, H. G. An, D. H. Kim, I. S. Kim, H. Park, D. H. Ahn, H. Horii, S. O. Park, U. I. Chung, and J. T. Moon, in IEEE International Electron Devices Meeting 2008, Technical Digest, New York, (2008), p. 211.
5. T. Ohta, N. Yamada, H. Yamamoto, T. Mitsuyu, T. Kozaki, J. Qiu, and K. Hirao, Mater. Res. Soc. Symp. Proc. 674, V1.1.1 (2001) 10.1557/PROC-674-V1.1
6. J. Siegel, A. Schropp, J. Solis, C. N. Afonso, and M. Wuttig, Appl. Phys. Lett. 84, 2250 (2004). 10.1063/1.1689756
7. S. R. Ovshinsky, Phys. Rev. Lett. 21, 1450 (1968). 10.1103/PhysRevLett. 21.1450
8. A. Pirovano, A. L. Lacaita, F. Pellizzer, S. A. Kostylev, A. Benvenuti, and R. Bez, IEEE Trans. Electron Devices 51, 714 (2004). 10.1109/TED.2004.825805
9. D. Ielmini, A. L. Lacaita, and D. Mantegazza, IEEE Trans. Electron Devices 54, 308 (2007). 10.1109/TED.2006.888752
10. I. V. Karpov, M. Mitra, D. Kau, G. Spadini, Y. A. Kryukov, and V. G. Karpov, J. Appl. Phys. 102, 124503 (2007). 10.1063/1.2825650
11. V. G. Karpov, Y. A. Kryukov, S. D. Savransky, and I. V. Karpov, Appl. Phys. Lett. 90, 123504 (2007). 10.1063/1.2715024
12. Y. Yin, T. Noguchi, H. Ohno, and S. Hosaka, Appl. Phys. Lett. 95, 133503 (2009). 10.1063/1.3240408
13. T. Nirschl, J. B. Phipp, T. D. Happ, G. W. Burr, B. Rajendran, M. H. Lee, A. Schrott, M. Yang, M. Breitwisch, C. F. Chen, E. Joseph, M. Lamorey, R. Cheek, S. H. Chen, S. Zaidi, S. Raoux, Y. C. Chen, Y. Zhu, R. Bergmann, H. L. Lung, and C. Lam, in Write Strategies for 2 and 4-bit Multi-Level Phase-Change Memory, (IEEE, Washington, DC, 2007), p. 461.
14. J. L. M. Oosthoek, B. J. Kooi, K. Attenborough, F. A. M. Hurkx, and D. J. Gravesteijn, Mater. Res. Soc. Symp. Proc., San Francisco, CA, (2010), G14-04-H07-04.
15. F. J. Jedema, M. A. A. in't Zandt, and W. S. M. M. Ketelaars, Appl. Phys. Lett. 91, 203509 (2007). 10.1063/1.2812568
16. D. Ielmini, D. Mantegazza, A. L. Lacaita, A. Pirovano, and F. Pellizzer, Solid-State Electron. 49, 1826 (2005). 10.1016/j.sse.2005.10.013
17. H. E. Kissinger, Anal. Chem. 29, 1702 (1957). 10.1021/ac60131a045
18. A. L. Lacaita, A. Redaelli, D. Ielmini, F. Pellizzer, A. Pirovano, A. Benvenuti, and R. Bez, Electrothermal And Phase-Change Dynamics In Chalcogenide-Based Memories., in IEDM Tech. Dig. (2004), p. 911.
19. M. Mitra, Y. Jung, D. S. Gianola, and R. Agarwal, Appl. Phys. Lett. 96, 222111 (2010). 10.1063/1.3447941
20. R. Pandian, B. J. Kooi, G. Palasantzas, J. T. M. De Hosson, and A. Pauza, Adv. Mater. 19, 4431 (2007). 10.1002/adma.v19:24
21. V. Weidenhof, I. Friedrich, S. Ziegler, and M. Wuttig, J. Appl. Phys. 86, 5879 (1999). 10.1063/1.371606
22. J. L. M. Oosthoek, B. J. Kooi, F. J. Jedema, K. Attenborough, and D. J. Gravesteijn (in preparation).
23. D. T. Castro, L. Goux, G. A. M. Hurkx, K. Attenborough, R. Delhougne, J. Lisoni, F. J. Jedema, M. Zandt, R. A. M. Wolters, D. J. Gravesteijn, M. A. Verheijen, M. Kaiser, R. G. R. Weemaes, and D. J. Wouters, Evidence of the Thermo-Electric Thomson Effect and Influence on the Program Conditions and Cell Optimization in Phase-Change Memory Cells., in IEDM Tech. Dig. (2007), p. 315.
24. B. Rajendran, M. H. Lee, M. Breitwisch, G. W. Burr, Y. H. Shih, R. Cheek, A. Schrott, C. F. Chen, M. Lamorey, E. Joseph, Y. Zhu, R. Dasaka, P. L. Flaitz, F. H. Baumann, H. L. Lung, and C. Lam, in IEEE Symposium on VLSI Technology, New York, (2008), p. 96.
25. D. M. Kang, D. Lee, H. M. Kim, S. W. Nam, M. H. Kwon, and K. B. Kim, Appl. Phys. Lett. 95, 011904 (2009). 10.1063/1.3168517
26. C. Kim, D. M. Kang, T. Y. Lee, K. H. P. Kim, Y. S. Kang, J. Lee, S. W. Nam, K. B. Kim, and Y. Khang, Appl. Phys. Lett. 94, 193504 (2009). 10.1063/1.3127223
27. S. W. Nam, D. Lee, M. H. Kwon, D. M. Kang, C. Kim, T. Y. Lee, S. Heo, Y. W. Park, K. Lim, H. S. Lee, J. S. Wi, K. W. Yi, Y. Khang, and K. B. Kim, Electrochem. Solid State Lett. 12, H155 (2009). 10.1149/1.3079480
28. Y. Tae-Youl, P. Il-Mok, K. Byoung-Joon, and J. Young-Chang, Appl. Phys. Lett. 95, 032104 (2009). 10.1063/1.3184584
29. A. Padilla, G. W. Burr, K. Virwani, A. Debunne, C. T. Rettner, T. Topuria, P. M. Rice, B. Jackson, D. Dupouy, A. J. Kellock, R. M. Shelby, K. Gopalakrishnan, R. S. Shenoy, and B. N. Kurdi, IEDM, IEEE International (2010), p. 29.4.1.
30. M. S. Youm, Y. T. Kim, Y. H. Kim, and M. Y. Sung, Phys. Status Solidi A 205, 1636 (2008). 10.1002/pssa.200824037
31. F. Jedema, M. in 't Zandt, R. Wolters, and D. Gravesteijn, Jpn. J. Appl. Phys. 50, 024102 (2011). 10.1143/JJAP.50.024102
32. J. L. M. Oosthoek, B. J. Kooi, K. Attenborough, F. A. M. Hurkx, and D. J. Gravesteijn, Mater. Res. Soc. Symp. Proc., San Francisco, CA, (2010), G14-04-H07-04.
33. J. Oosthoek, B. J. Kooi, J. T. M. De Hosson, D. Gravesteijn, K. Attenborough, R. Wolters, and M. Verheijen, Crystallization studies of doped SbTe phase-change thin films and PRAM line cells: Growth rate determination by automated TEM image analysis, Proc. E/PCOS Symp. (2009), p. 140.
34. D. Krebs, S. Raoux, C. T. Rettner, G. W. Burr, M. Salinga, and M. Wuttig, Appl. Phys. Lett. 95, 082101 (2009). 10.1063/1.3210792
35. A. Redaelli, A. Pirovano, E. Pellizzer, A. L. Lacaita, D. Ielmini, and R. Bez, IEEE Electron Device Lett. 25, 684 (2004). 10.1109/LED.2004.836032
36. J. L. M. Oosthoek, B. J. Kooi, J. T. M. De Hosson, R. A. M. Wolters, D. J. Gravesteijn, and K. Attenborough, Microsc. Microanal. 16, 291 (2010). 10.1017/S1431927610000176