-
1
-
-
0035717521
-
OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications
-
S. Lai and T. Lowrey, "OUM - A 180 nm nonvolatile memory cell element technology for stand alone and embedded applications," in IEDM Tech. Dig., 2001, pp. 803-806.
-
(2001)
IEDM Tech. Dig
, pp. 803-806
-
-
Lai, S.1
Lowrey, T.2
-
2
-
-
11144230051
-
Reliability study of phase-change nonvolatile memories
-
Sep
-
A. Pirovano, A. Redaelli, F. Pellizzer, F. Ottogalli, M. Tosi, D. Ielmini, A. L. Lacaita, and R. Bez, "Reliability study of phase-change nonvolatile memories," IEEE Trans. Device Mater. Rel., vol. 4, no. 3, pp. 422-427, Sep. 2004.
-
(2004)
IEEE Trans. Device Mater. Rel
, vol.4
, Issue.3
, pp. 422-427
-
-
Pirovano, A.1
Redaelli, A.2
Pellizzer, F.3
Ottogalli, F.4
Tosi, M.5
Ielmini, D.6
Lacaita, A.L.7
Bez, R.8
-
3
-
-
2442604559
-
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials
-
May
-
A. Pirovano, A. L. Lacaita, F. Pellizzer, S. A. Kostylev, A. Benvenuti, and R. Bez, "Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials," IEEE Trans. Electron Devices, vol. 51, no. 5, p. 714-719, May 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.5
, pp. 714-719
-
-
Pirovano, A.1
Lacaita, A.L.2
Pellizzer, F.3
Kostylev, S.A.4
Benvenuti, A.5
Bez, R.6
-
4
-
-
33947200124
-
Calorimetric measurements of structural relaxation and glass transition temperatures in sputtered films of amorphous Te alloys used for phase change recording
-
J. A. Kalb, M. Wuttig, and F. Spaepen, "Calorimetric measurements of structural relaxation and glass transition temperatures in sputtered films of amorphous Te alloys used for phase change recording," J. Mater. Res., vol. 22, pp. 748-754, 2007.
-
(2007)
J. Mater. Res
, vol.22
, pp. 748-754
-
-
Kalb, J.A.1
Wuttig, M.2
Spaepen, F.3
-
5
-
-
0842309810
-
Current status of the phase change memory and its future
-
S. Lai, "Current status of the phase change memory and its future," in IEDM Tech. Dig, 2003, pp. 255-258.
-
(2003)
IEDM Tech. Dig
, pp. 255-258
-
-
Lai, S.1
-
6
-
-
28744434484
-
Reliability investigations for manufacturable high density PRAM
-
K. Kim and S.-J. Ahn, "Reliability investigations for manufacturable high density PRAM," in Proc. IRPS, 2005, pp. 157-162.
-
(2005)
Proc. IRPS
, pp. 157-162
-
-
Kim, K.1
Ahn, S.-J.2
-
7
-
-
34548758518
-
Data retention characterization of phase change memory arrays
-
B. Gleixner, A. Pirovano, J. Sarkar, F. Ottogalli, I. Tortorelli, M. Tosi, and R. Bez, "Data retention characterization of phase change memory arrays," in Proc. IRPS, 2007, pp. 542-546.
-
(2007)
Proc. IRPS
, pp. 542-546
-
-
Gleixner, B.1
Pirovano, A.2
Sarkar, J.3
Ottogalli, F.4
Tortorelli, I.5
Tosi, M.6
Bez, R.7
-
8
-
-
0142120868
-
5 thin films
-
Oct
-
5 thin films," J. Appl. Phys., vol. 94, no. 7, p. 4409, Oct. 2003.
-
(2003)
J. Appl. Phys
, vol.94
, Issue.7
, pp. 4409
-
-
Privitera, S.1
Rimini, E.2
Bongiorno, C.3
Zonca, R.4
Pirovano, A.5
Bez, R.6
-
9
-
-
0029392223
-
Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth
-
Oct
-
J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs, "Laser-induced crystallization phenomena in GeTe-based alloys. I. Characterization of nucleation and growth," J. Appl. Phys., vol. 78, no. 8, pp. 4906-4917, Oct. 1995.
-
(1995)
J. Appl. Phys
, vol.78
, Issue.8
, pp. 4906-4917
-
-
Coombs, J.H.1
Jongenelis, A.P.J.M.2
van Es-Spiekman, W.3
Jacobs, B.A.J.4
-
10
-
-
0029392282
-
Laser-induced crystallization phenomena in GeTe-based alloys. II. Composition dependence of nucleation and growth
-
Oct
-
J. H. Coombs, A. P. J. M. Jongenelis, W. van Es-Spiekman, and B. A. J. Jacobs, "Laser-induced crystallization phenomena in GeTe-based alloys. II. Composition dependence of nucleation and growth," J. Appl. Phys. vol. 78, no. 8, pp. 4918-4928, Oct. 1995.
-
(1995)
J. Appl. Phys
, vol.78
, Issue.8
, pp. 4918-4928
-
-
Coombs, J.H.1
Jongenelis, A.P.J.M.2
van Es-Spiekman, W.3
Jacobs, B.A.J.4
-
11
-
-
0742284414
-
5 in optical and electrical memory devices
-
Jan
-
5 in optical and electrical memory devices," J. Appl. Phys., vol. 95, no. 2, pp. 504-511, Jan. 2004.
-
(2004)
J. Appl. Phys
, vol.95
, Issue.2
, pp. 504-511
-
-
Senkader, S.1
Wright, C.D.2
-
12
-
-
0031268714
-
Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media
-
Nov
-
C. Peng, L. Cheng, and M. Mansuripur, "Experimental and theoretical investigations of laser-induced crystallization and amorphization in phase-change optical recording media," J. Appl. Phys., vol. 82, no. 9, pp. 4183-4191, Nov. 1997.
-
(1997)
J. Appl. Phys
, vol.82
, Issue.9
, pp. 4183-4191
-
-
Peng, C.1
Cheng, L.2
Mansuripur, M.3
-
13
-
-
3142702784
-
Atontic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys
-
Jun
-
J. Kalb, F. Spaepen, and M. Wuttig, "Atontic force microscopy measurements of crystal nucleation and growth rates in thin films of amorphous Te alloys," Appl. Phys. Lett., vol. 84, no. 25, pp. 5240-5242, Jun. 2004.
-
(2004)
Appl. Phys. Lett
, vol.84
, Issue.25
, pp. 5240-5242
-
-
Kalb, J.1
Spaepen, F.2
Wuttig, M.3
-
14
-
-
25144474892
-
Crystal morphology and nucleation in thin films of amorphous Te alloys used for phase change recording
-
Sep
-
J. Kalb, C. Y. Wen, F. Spaepen, H. Dieker, and M. Wuttig, "Crystal morphology and nucleation in thin films of amorphous Te alloys used for phase change recording," J. Appl. Phys., vol. 98, no. 5, p. 054 902, Sep. 2005.
-
(2005)
J. Appl. Phys
, vol.98
, Issue.5
, pp. 054-902
-
-
Kalb, J.1
Wen, C.Y.2
Spaepen, F.3
Dieker, H.4
Wuttig, M.5
-
15
-
-
25144444951
-
Kinetics of crystal nucleation in undercooled droplets of Sb- and Te- based alloys used for phase change recording
-
Sep
-
J. A. Kalb, F. Spaepen, and M. Wuttig, "Kinetics of crystal nucleation in undercooled droplets of Sb- and Te- based alloys used for phase change recording," J. Appl. Phys., vol. 98, no. 5, p. 054 910, Sep. 2005.
-
(2005)
J. Appl. Phys
, vol.98
, Issue.5
, pp. 054-910
-
-
Kalb, J.A.1
Spaepen, F.2
Wuttig, M.3
-
16
-
-
33947188453
-
Scaling properties of phase change nanostructures and thin films
-
S. Raoux, C. Rettner, J. Jordan-Sweet, V. Deline, J. Philipp, and H.-L. Lung, "Scaling properties of phase change nanostructures and thin films," in Proc. EPCOS Conf., 2006, pp. 127-134.
-
(2006)
Proc. EPCOS Conf
, pp. 127-134
-
-
Raoux, S.1
Rettner, C.2
Jordan-Sweet, J.3
Deline, V.4
Philipp, J.5
Lung, H.-L.6
-
17
-
-
0000629043
-
5 films studied by electrical resistance measurements
-
May
-
5 films studied by electrical resistance measurements," J. Appl. Phys., vol. 87, no. 9, pp. 4130-4134, May 2000.
-
(2000)
J. Appl. Phys
, vol.87
, Issue.9
, pp. 4130-4134
-
-
Friedrich, I.1
Weidenhof, V.2
Njoroge, W.3
Franz, P.4
Wuttig, M.5
-
18
-
-
18644386647
-
5 films
-
Sep
-
5 films," J. Appl. Phys., vol. 92, no. 6, pp. 3116-3123, Sep. 2002.
-
(2002)
J. Appl. Phys
, vol.92
, Issue.6
, pp. 3116-3123
-
-
Ruitenberg, G.1
Petford-Long, A.K.2
Doole, R.C.3
-
19
-
-
46149125725
-
Ultra-thin phase-change bridge memory device using GeSb
-
Y. C. Chen et al., "Ultra-thin phase-change bridge memory device using GeSb," in IEDM Tech. Dig., 2006, pp. 777-780.
-
(2006)
IEDM Tech. Dig
, pp. 777-780
-
-
Chen, Y.C.1
-
20
-
-
33947243961
-
Intrinsic data retention in nanoscaled PCMs - Part I: Monte Carlo model for crystallization and percolation
-
Dec
-
U. Russo, D. Ielmini, A. Redaelli, and A. L. Lacaita, "Intrinsic data retention in nanoscaled PCMs - Part I: Monte Carlo model for crystallization and percolation," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3032-3039, Dec. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.12
, pp. 3032-3039
-
-
Russo, U.1
Ielmini, D.2
Redaelli, A.3
Lacaita, A.L.4
-
21
-
-
33847607700
-
Intrinsic data retention in nanoscaled PCMs - Part II: Statistical analysis and prediction of failure time
-
Dec
-
A. Redaelli, D. Ielmini, U. Russo, and A. L. Lacaita, "Intrinsic data retention in nanoscaled PCMs - Part II: Statistical analysis and prediction of failure time," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 3040-3046, Dec. 2006.
-
(2006)
IEEE Trans. Electron Devices
, vol.53
, Issue.12
, pp. 3040-3046
-
-
Redaelli, A.1
Ielmini, D.2
Russo, U.3
Lacaita, A.L.4
-
22
-
-
4544229593
-
Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications
-
F. Pellizzer, A. Pirovano, F. Ottogalli, M. Magistretti, M. Scaravaggi, P. Zuliani, M. Tosi, A. Benvenuti, P. Besana, S. Cadeo, T. Marangon, R. Morandi, R. Piva, A. Spandre, R. Zonca, A. Modelli, E. Varesi, T. Lowrey, A. Lacaita, G. Casagrande, P. Cappelletti, and R. Bez, "Novel μtrench phase-change memory cell for embedded and stand-alone non-volatile memory applications," in VLSI Symp. Tech. Dig., 2004, pp. 18-19.
-
(2004)
VLSI Symp. Tech. Dig
, pp. 18-19
-
-
Pellizzer, F.1
Pirovano, A.2
Ottogalli, F.3
Magistretti, M.4
Scaravaggi, M.5
Zuliani, P.6
Tosi, M.7
Benvenuti, A.8
Besana, P.9
Cadeo, S.10
Marangon, T.11
Morandi, R.12
Piva, R.13
Spandre, A.14
Zonca, R.15
Modelli, A.16
Varesi, E.17
Lowrey, T.18
Lacaita, A.19
Casagrande, G.20
Cappelletti, P.21
Bez, R.22
more..
-
23
-
-
33947235039
-
Impact of crystallization statistics on data retention for phase change memories
-
A. Redaelli, D. Ielmini, A. L. Lacaita, A. Pirovano, F. Pellizzer, and R. Bez, "Impact of crystallization statistics on data retention for phase change memories," in IEDM Tech. Dig., 2005, pp. 761-764.
-
(2005)
IEDM Tech. Dig
, pp. 761-764
-
-
Redaelli, A.1
Ielmini, D.2
Lacaita, A.L.3
Pirovano, A.4
Pellizzer, F.5
Bez, R.6
-
24
-
-
0000041835
-
Percolation models for gate oxide breakdown
-
Nov
-
J. H. Stathis, "Percolation models for gate oxide breakdown," J. Appl. Phys., vol. 86, no. 10, pp. 5757-5766, Nov. 1999.
-
(1999)
J. Appl. Phys
, vol.86
, Issue.10
, pp. 5757-5766
-
-
Stathis, J.H.1
-
26
-
-
0035978771
-
Materials aspects in phase change optical recording
-
G. F. Zhou, "Materials aspects in phase change optical recording," Mater. Sci. Eng. A, vol. 304-306, pp. 73-80, 2001.
-
(2001)
Mater. Sci. Eng. A
, vol.304-306
, pp. 73-80
-
-
Zhou, G.F.1
-
27
-
-
21644477080
-
Electrothermal and phase-change dynamics in chalcogenide-based memories
-
A. L. Lacaita, A. Redaelli, D. Ielmini, F. Pellizzer, A. Pirovano, A. Benvenuti, and R. Bez, "Electrothermal and phase-change dynamics in chalcogenide-based memories," in IEDM Tech. Dig., 2004, pp. 911-914.
-
(2004)
IEDM Tech. Dig
, pp. 911-914
-
-
Lacaita, A.L.1
Redaelli, A.2
Ielmini, D.3
Pellizzer, F.4
Pirovano, A.5
Benvenuti, A.6
Bez, R.7
-
28
-
-
3943059536
-
Impact of correlated generation of oxide defects on SILC and breakdown distributions
-
Aug
-
D. Ielmini, A. S. Spinelli, A. L. Lacaita, and M. J. van Duuren, "Impact of correlated generation of oxide defects on SILC and breakdown distributions," IEEE Trans. Electron Devices, vol. 51, no. 8, pp. 1281-1287, Aug. 2004.
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, Issue.8
, pp. 1281-1287
-
-
Ielmini, D.1
Spinelli, A.S.2
Lacaita, A.L.3
van Duuren, M.J.4
-
29
-
-
0020721783
-
Stability limit of supercooled liquids
-
Mar
-
H. B. Singh and A. Holz, "Stability limit of supercooled liquids," Solid State Commun., vol. 45, no. 11, pp. 985-987, Mar. 1983.
-
(1983)
Solid State Commun
, vol.45
, Issue.11
, pp. 985-987
-
-
Singh, H.B.1
Holz, A.2
-
30
-
-
34548810303
-
A physics-based crystallization model for retention in phase-change memories
-
U. Russo, D. Ielmini, and A. L. Lacaita, "A physics-based crystallization model for retention in phase-change memories," in Proc. IRPS, 2007, pp. 547-553.
-
(2007)
Proc. IRPS
, pp. 547-553
-
-
Russo, U.1
Ielmini, D.2
Lacaita, A.L.3
-
31
-
-
0005158609
-
3 psuedobinary amorphous thin films for an optical disk memory
-
Mar
-
3 psuedobinary amorphous thin films for an optical disk memory," J. Appl. Phys., vol. 69, no. 5, pp. 2849-2856, Mar. 1991.
-
(1991)
J. Appl. Phys
, vol.69
, Issue.5
, pp. 2849-2856
-
-
Yamada, N.1
Ohno, E.2
Nishiuchi, K.3
Akahira, N.4
Takao, M.5
-
32
-
-
0035826241
-
Supercooled liquids and the glass transition
-
Mar
-
P. G. Debenedetti and F. H. Stillinger, "Supercooled liquids and the glass transition," Nature, vol. 410, no. 6825, pp. 259-267, Mar. 2001.
-
(2001)
Nature
, vol.410
, Issue.6825
, pp. 259-267
-
-
Debenedetti, P.G.1
Stillinger, F.H.2
-
33
-
-
0024701666
-
Kinetics of structural relaxations in the glassy semiconductor a-Se
-
S. O. Kasap and S. Yannacpoulus, "Kinetics of structural relaxations in the glassy semiconductor a-Se," J. Mater. Res., vol. 4, no. 4, pp. 893-905, 1989.
-
(1989)
J. Mater. Res
, vol.4
, Issue.4
, pp. 893-905
-
-
Kasap, S.O.1
Yannacpoulus, S.2
-
34
-
-
35148862851
-
-
International Roadmap for Semiconductors, Process Integration, 2005 Edition, Online, Available
-
International Roadmap for Semiconductors - Process Integration, Devices, and Structures, 2005 Edition, 2006. [Online]. Available: http://www.itrs.net/
-
(2006)
Devices, and Structures
-
-
-
35
-
-
31144432926
-
Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes
-
Jan
-
C. Wright, M. Armand, and M. Aziz, "Terabit-per-square-inch data storage using phase-change media and scanning electrical nanoprobes," IEEE Trans. Nanotechnol., vol. 5, no. 1, pp. 50-61, Jan. 2006.
-
(2006)
IEEE Trans. Nanotechnol
, vol.5
, Issue.1
, pp. 50-61
-
-
Wright, C.1
Armand, M.2
Aziz, M.3
|