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Applied Physics Letters

Volumn 101, Issue 9, 2012, Pages

Ultra-fast calorimetry study of Ge 2Sb 2Te 5 crystallization between dielectric layers

(5) Orava, J a Greer, A L a Gholipour, B b Hewak, D W b Smith, C E c

a UNIVERSITY OF CAMBRIDGE (United Kingdom)

b UNIVERSITY OF SOUTHAMPTON (United Kingdom)

c Mettler Toledo Ltd (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION TEMPERATURE; DEVICE OPERATIONS; DIELECTRIC LAYER; NON-VOLATILE RANDOM-ACCESS MEMORIES; PHASE CHANGE; ULTRA-FAST; ZNS-SIO;

CHALCOGENIDES; DIFFERENTIAL SCANNING CALORIMETRY; HEATING RATE; ZINC SULFIDE;

GERMANIUM;

EID: 84865849945 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4748881 Document Type: Article

Times cited : (46)

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