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Volumn 4, Issue 52, 2014, Pages 27308-27314

Band alignment and Schottky behaviour of InN/GaN heterostructure grown by low-temperature low-energy nitrogen ion bombardment

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; ION BOMBARDMENT; NITROGEN; SCHOTTKY BARRIER DIODES; THERMIONIC EMISSION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 84903589743     PISSN: None     EISSN: 20462069     Source Type: Journal    
DOI: 10.1039/c4ra02533d     Document Type: Article
Times cited : (12)

References (62)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.