Space-charge-limited currents in GaN Schottky diodes

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 847-852

  Shen, X M ^a   Zhao, D G ^b   Liu, Z S ^b   Hu, Z F ^a   Yang, H ^b   Liang, J W ^a,b  

^a TONGJI UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

GaN; I V characteristics; Schottky diode; Space charge limited current

Indexed keywords

CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC SPACE CHARGE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMIZATION; PHOTOCONDUCTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS;

BAND GAPS; COMPOUND SEMICONDUCTORS; SCHOTTKY DIODES; SPACE-CHARGE-LIMITED CURRENTS (SCLC);

GALLIUM NITRIDE;

EID: 14844337911     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.02.003     Document Type: Conference Paper

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